| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated Available • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature Available • Fast switching • Ease of paralleling • Material categorization: for def |
|
|
|
|
Vishay |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRLR120, SiHLR120) • Straight lead (IRLU120, SiHLU120) • Available in tape and reMel • Logic-level gate drive Available • RDS(on) specified at VGS = 4 V and 5 V • Material c |
|
|
|
|
Vishay |
Power MOSFET • Dynamic dV/dt Rating • For Automatic Insertion • End Stackable • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DE |
|
|
|
|
Vishay Siliconix |
Power MOSFET • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Logic-level gate drive Available • RDS (on) specified at VGS = 4 V and 5 V • 175°C operating temperature Available • Fast switching • Material categorization: for definitio |
|
|
|
|
Vishay |
Power MOSFET 60 0.20 • Dynamic dV/dt Rating • For Automatic Insertion • End Stackable • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMP |
|
|
|
|
Vishay |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIA |
|
|
|
|
Vishay |
Power MOSFET • Dynamic dV/dt Rating • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPL |
|
|
|
|
Vishay |
Power MOSFET • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS* • Sink to Lead Creepage Distance 4.8 mm COMPLIANT • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of para |
|
|
|
|
Vishay |
Power MOSFET • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling • Lead (Pb)-free RoHS CO |
|
|
|
|
Vishay |
ower MOSFET • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V • Fast Switching • Ease of paralleling • Lead (Pb)-free Available Ava |
|
|
|
|
Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPL |
|
|
|
|
Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMP |
|
|
|
|
Vishay Siliconix |
Power MOSFET • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Logic-level gate drive Available • RDS (on) specified at VGS = 4 V and 5 V • 175°C operating temperature Available • Fast switching • Material categorization: for definitio |
|
|
|
|
Vishay |
Power MOSFET 100 0.16 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive •R DS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature •F ast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC Available |
|
|
|
|
Vishay |
Power MOSFET • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching Available • Ease of paralleling • Material categorization: for definitions of compliance pl |
|
|
|
|
Vishay |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated Available • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature Available • Fast switching • Ease of paralleling • Material categorization: for def |
|
|
|
|
Vishay |
Power MOSFET |
|
|
|
|
Vishay |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Material categorization: For definitions of compliance pl |
|
|
|
|
Vishay |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Compliant to RoHS Directive 2002/95/EC Available RoHS* C |
|
|
|
|
Vishay |
Power MOSFET • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Ease of paralleling • Material categorization |
|
Desde 2024. D4U Semiconductor.
|