Vishay GP3 Hoja de datos

No.	parte #	Fabricante	Descripción
1	DGP30	Vishay Siliconix	Clamper/Damper Glass Passivated Rectifier • Superectifier structure • Cavity-free glass passivated junction • Low forward voltage drop • Typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of c
2	EGP30F	Vishay Siliconix	(EGP30x) Glass Passivated Ultrafast Rectifier • Superectifier structure for high reliability condition SUPERECTIFIER® • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forwar
3	EGP30B	Vishay Siliconix	(EGP30x) Glass Passivated Ultrafast Rectifier • Superectifier structure for high reliability condition SUPERECTIFIER® • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forwar
4	CGP30	Vishay Siliconix	Clamper/Damper Glass Passivated Rectifier • Superectifier structure • Cavity-free glass passivated junction • Low forward voltage drop • Typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of c
5	EGP30A	Vishay Siliconix	(EGP30x) Glass Passivated Ultrafast Rectifier • Superectifier structure for high reliability condition SUPERECTIFIER® • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forwar
6	EGP30C	Vishay Siliconix	(EGP30x) Glass Passivated Ultrafast Rectifier • Superectifier structure for high reliability condition SUPERECTIFIER® • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forwar
7	EGP30G	Vishay Siliconix	(EGP30x) Glass Passivated Ultrafast Rectifier • Superectifier structure for high reliability condition SUPERECTIFIER® • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forwar
8	RGP30M	Vishay	Glass Passivated Junction Fast Switching Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.2 μA • High forward surge capability • Solder dip 275 °C max. 10 s, pe
9	FGP30D	Vishay	Glass Passivated Ultrafast Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets environ
10	FGP30C	Vishay	Glass Passivated Ultrafast Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets environ
11	VS-GP300TD60S	Vishay	Dual INT-A-PAK Low Profile Half Bridge Trench PT IGBT • Trench PT IGBT technology • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 • Designed for industrial level • Material catego
12	GP30K	Vishay	Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 μA • Low forward voltage drop • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-
13	GP30G	Vishay	Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 μA • Low forward voltage drop • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-
14	GP30D	Vishay	Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 μA • Low forward voltage drop • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-
15	EGP30D	Vishay Siliconix	(EGP30x) Glass Passivated Ultrafast Rectifier • Superectifier structure for high reliability condition SUPERECTIFIER® • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forwar
16	RGP30G	Vishay	Glass Passivated Junction Fast Switching Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.2 μA • High forward surge capability • Solder dip 275 °C max. 10 s, pe
17	RGP30K	Vishay	Glass Passivated Junction Fast Switching Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.2 μA • High forward surge capability • Solder dip 275 °C max. 10 s, pe
18	FGP30B	Vishay	Glass Passivated Ultrafast Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets environ
19	GP30M	Vishay	Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 μA • Low forward voltage drop • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-
20	GP30J	Vishay	Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 μA • Low forward voltage drop • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-