| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay |
High Voltage Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of com |
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Vishay |
High Voltage Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of com |
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Vishay |
High Voltage Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of com |
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Vishay |
Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorizat |
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Vishay |
High Voltage Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of com |
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Vishay |
Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorizat |
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Vishay |
Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorizat |
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Vishay |
Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorizat |
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Vishay |
Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorizat |
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Vishay |
High Voltage Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of com |
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Vishay Siliconix |
Glass Passivated Junction Fast Switching Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.2 μA • High forward surge capability • Solder dip 275 °C max. 10 s, pe |
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Vishay Siliconix |
Glass Passivated Junction Fast Switching Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.2 μA • High forward surge capability • Solder dip 275 °C max. 10 s, pe |
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Vishay Siliconix |
Glass Passivated Junction Fast Switching Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.2 μA • High forward surge capability • Solder dip 275 °C max. 10 s, pe |
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Vishay Siliconix |
Glass Passivated Junction Fast Switching Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.2 μA • High forward surge capability • Solder dip 275 °C max. 10 s, pe |
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Vishay Siliconix |
Glass Passivated Junction Fast Switching Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.2 μA • High forward surge capability • Solder dip 275 °C max. 10 s, pe |
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Vishay Siliconix |
Glass Passivated Junction Fast Switching Rectifier Reverse Voltage 1200 to 2000V Forward Current 0.5A * d e t n e t a P 0.107 (2.7) 0.080 (2.0) DIA. ® 1.0 (25.4) MIN. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.026 (0.66) 0.023 (0.58) DIA. • Plastic package has Underwriters Laboratories Flammabil |
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Vishay |
Glass Passivated Junction Fast Switching Plastic Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.2 μA • High forward surge capability • Solder dip 275 °C max. 10 s, pe |
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Vishay |
Glass Passivated Junction Fast Switching Plastic Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.2 μA • High forward surge capability • Solder dip 275 °C max. 10 s, pe |
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Desde 2024. D4U Semiconductor.
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