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Vishay |
Schottky Barrier Rectifier • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of c |
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Vishay |
Schottky Barrier Plastic Rectifier • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categori |
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Vishay |
Surface Mount Schottky Rectifier • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Materi |
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Vishay |
Schottky Barrier Rectifier • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of c |
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Vishay |
Power MOSFET • A specific on resistance (m-cm2) reduction of 25 % • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: |
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Vishay |
Transient Voltage Suppressors • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % Availa |
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Vishay Siliconix |
Schottky Barrier Rectifier • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • 20 kV ESD capability DO-201AD • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to Ro |
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Vishay Siliconix |
Schottky Barrier Rectifier • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • 20 kV ESD capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE |
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Desde 2024. D4U Semiconductor.
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