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Vishay |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263A |
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Vishay |
Thick Film Chip Resistors • Fully conforms to the requirements of MIL-PRF-55342 • Established reliability - verified failure rate; M, P, R, U, S, V, and T levels • Construction is sulfur impervious against a high sulfur environment (ASTM B 809-95 test method) • 100 % group A |
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Vishay Telefunken |
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package D D D D D D D Extra high radiant power Suitable for high pulse current operation Standard T –1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 24° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors Applications I |
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Vishay Siliconix |
Capacitors Y2 pFY2 pFY2 pFY2 pFY2 pFY2 pFY2 pFY2 pFY2 pFY2 pFY2 pFY2 pFY2 pFY2 pFY2 COATING: Plastic case, epoxy resin sealed, flame retardant, UL-class 94V-0 AC 275V, 50/60Hz ⇒ X1 AC 250V, 50/60Hz ⇒ Y2 WEIGHT (g) 10.3 10.3 10.4 10.6 10.7 13.7 17.2 22.1 26.8 2 |
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Vishay Telefunken |
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package D D D D D D D Extra high radiant power Suitable for high pulse current operation Standard T –1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 24° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors Applications I |
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Vishay Telefunken |
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package D D D D D D D Extra high radiant power Suitable for high pulse current operation Standard T –1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 24° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors Applications I |
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Vishay Telefunken |
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package D D D D D D D Extra high radiant power Suitable for high pulse current operation Standard T –1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 24° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors Applications I |
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Vishay Telefunken |
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package D D D D D D D Extra high radiant power Suitable for high pulse current operation Standard T –1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 24° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors Applications I |
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Vishay Siliconix |
N-/P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Complementary MOSFET for Portable Devices - Ideal for Buck-Boost Circuits 1 S1 D1 D1 G1 S2 D2 G2 D2 D1 M |
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Vishay Siliconix |
High Surge Suppression Varistors • Zinc oxide disc, epoxy coated RoHS COMPLIANT • Straight or kinked leads • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Certified according to UL1449, VDE/IEC 61051 and CSA APPLICATION • Supression of transients DESCRIPTION |
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Vishay |
Capacitor • Terminations: tin / lead (SnPb), 100 % tin (RoHS-compliant) Available • Hermetically-sealed, axial-lead solid tantalum capacitors Available • Small size and long life • Exceptional capacitance stability and excellent resistance to severe env |
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Vishay |
Thick Film Chip Resistors • Suitable for solderable, epoxy bondable, or wire bondable applications • Termination material: gold, platinum silver, Available platinum palladium gold or solder coated non-magnetic terminations available Available • Multiple styles, termina |
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Vishay |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263A |
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Vishay |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263A |
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Vishay |
Thick Film Chip Resistors • Operating temperature range: - 55 °C to + 150 °C • Same materials and construction as MIL-PRF-55342 chip resistors • Termination: Tin/Lead wraparound termination over nickel barrier. Also available with lead (Pb)-free wraparound terminations • Capa |
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Vishay Siliconix |
Schottky Barrier Rectifier • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-201AD • Compliant to RoHS directive 2002/95/EC |
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Vishay Siliconix |
N-/P-Channel MOSFET • TrenchFET® Power MOSFETs • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC for portable applications • Load switch D1 S2 G2 G1 Available Marking Code: EF Ordering Information: Si5 |
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Vishay Siliconix |
Complementary MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 G2 D2 Marking Code EA XX Lot Traceability and Date Code Part # Code Bottom Vi |
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Vishay Siliconix |
High Surge Suppression Varistors • Zinc oxide disc, epoxy coated RoHS COMPLIANT • Straight or kinked leads • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Certified according to UL1449, VDE/IEC 61051 and CSA APPLICATION • Supression of transients DESCRIPTION |
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Vishay |
Schottky Barrier Plastic Rectifier • Guardring for overvoltage protection • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in ac |
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Desde 2024. D4U Semiconductor.
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