| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay |
Aluminum Capacitor • Life test 2000 h at +125 °C • Wide temperature range • Foil tantalum replacement Available • Unique Teflon end seal for long life • High vibration capability • Material categorization: for definitions of compliance please see www.vishay.com/ |
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Vishay |
Heavy Duty High-Voltage Capacitor Low DF and Low Heating, Low DC & AC Voltage Coefficient. • Tighter Tolerance On Capacitance. • Highest AC Voltage Ratings. PERFORMANCE CHARACTERISTICS: Operating Temperature Range: -30°C to +85°C Storage Temperature Range: -40°C to +100°C Dielectric |
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Vishay |
Glass Passivated Junction Plastic Rectifiers • Glass passivated chip junction • Ideal for printed circuit boards • Low forward voltage drop • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/ |
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Vishay |
Heavy Duty High-Voltage Capacitor Low DF and Low Heating, Low DC & AC Voltage Coefficient. • Tighter Tolerance On Capacitance. • Highest AC Voltage Ratings. PERFORMANCE CHARACTERISTICS: Operating Temperature Range: -30°C to +85°C Storage Temperature Range: -40°C to +100°C Dielectric |
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Vishay |
Heavy Duty High-Voltage Capacitor Low DF and Low Heating, Low DC & AC Voltage Coefficient. • Tighter Tolerance On Capacitance. • Highest AC Voltage Ratings. PERFORMANCE CHARACTERISTICS: Operating Temperature Range: -30°C to +85°C Storage Temperature Range: -40°C to +100°C Dielectric |
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Vishay |
Glass Passivated Junction Rectifier • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • |
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Vishay |
Glass Passivated Junction Fast Switching Plastic Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, pe |
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Desde 2024. D4U Semiconductor.
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