| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay Siliconix |
Solid-Electrolyte TANTALEX Capacitors Hermetically-Sealed/ Axial-Lead • Terminations: Tin/lead (SnPb), 100 % Tin (RoHS compliant) Available • These high performance, hermetically-sealed RoHS* TANTALEX® capacitors have set the standard for COMPLIANT solid-electrolyte tantalum capacitors for more than three decades. • Hi |
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Vishay |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT |
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Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance pleas |
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Vishay Siliconix |
Bridge Rectifiers • UL recognition file number E312394 • Thin single in-line package • Glass passivated chip junction • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU15065S) Available • Superior thermal conductivity • Solder dip |
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Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/ |
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Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22 |
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Vishay |
Ultra-Fast Avalanche Sinterglass Diode • High reverse voltage • Glass passivated • Low reverse current • Low forward voltage drop • Hermetically sealed axial-leaded glass envelope • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • |
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Vishay |
AC Line Rated Disc Capacitors • Complying with IEC 60384-14 • High reliability • Vertical (inline) kinked or straight leads • Singlelayer AC disc safety capacitors • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RE |
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Vishay |
Hyperfast Rectifier • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current • Designed and qualified according to JEDEC®-JESD 47 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categoriz |
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Vishay |
Hyperfast Rectifier • Hyperfast soft recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current • True 2 pin package • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance |
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Vishay |
Bridge Rectifiers • UL recognition file number E309391 (QQQX2) UL 1557 (see *) • Thin single in-line package • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU15065S) • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD |
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Vishay |
Bridge Rectifiers • UL recognition file number E309391 (QQQX2) UL 1557 (see *) • Thin single in-line package • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU15065S) • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD |
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Vishay Siliconix |
Ultrafast Soft Recovery Diode • Ultrafast recovery • 175 °C operating junction temperature • Screw mounting only • Lead (Pb)-free plating Cathode Anode RoHS COMPLIANT • Designed and qualified for industrial level www.DataSheet4U.com BENEFITS PowerTabTM • Reduced RFI and EMI |
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Vishay Siliconix |
Bridge Rectifiers • UL recognition file number E312394 • Thin single in-line package • Glass passivated chip junction • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU15065S) Available • Superior thermal conductivity • Solder dip |
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Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22 |
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Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22 |
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Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22 |
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Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22 |
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Vishay |
Aluminum Housed Compact Wirewound Resistor • Power rating up to 500 W • High overload capacity • Protection IP20 or IP65 • Enhanced humidity protection • Complete housed construction • Multiple construction for higher power rating • Heatsink mounting • Material categorization: for definitions |
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Vishay |
Aluminum Housed Compact Wirewound Resistor • Power rating up to 500 W • High overload capacity • Protection IP20 or IP65 • Enhanced humidity protection • Complete housed construction • Multiple construction for higher power rating • Heatsink mounting • Material categorization: for definitions |
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Desde 2024. D4U Semiconductor.
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