| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Vanguard Semiconductor |
Dual N-Channel Advanced Power MOSFET Dual N-Channel，2.5V Logic Level Control Low on-resistance RDS(on) @ VGS=2.5 V Fast Switching ESD Protection HBM 2.5KV Pb-free lead plating; RoHS compliant V DS R @DS(on),TYP VGS=4.5 V R @DS(on),TYP VGS=2.5 V ID 20 V 19 mΩ 26 mΩ 7A TSSOP8 |
|
|
|
|
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel，10V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=10 V 100% Avalanche test Pb-free lead plating; RoHS compliant VS80N08ATD 80V/105A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V ID 80 V |
|
|
|
|
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel，10V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=10 V 100% Avalanche test Pb-free lead plating; RoHS compliant VS80N08AT 80V/83A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V ID 80 V 6 |
|
|
|
|
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET ¨Low On-Resistance ¨Fast Switching ¨100% Avalanche Tested ¨Repetitive Avalanche Allowed up to Tjmax ¨Lead-Free, RoHS Compliant Description VS8066ATD designed by the trench processing techniques to achieve extremely low on-resistance. fast sw |
|
|
|
|
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel，10V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=10 V 100% Avalanche test Pb-free lead plating; RoHS compliant VS80N08AN 80V/105A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V ID 80 V |
|
|
|
|
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel，5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching and High efficiency 100% Avalanche Tested Pb-free lead plating; RoHS compliant VS8068ATD 80V/70A N-Channel Advanced Power MOSFET V DS |
|
|
|
|
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel，5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Technology 100% Avalanche test Pb-free lead plating; RoHS compliant VS8404AS 80V/17A N-Channel Advanced Power MOSFET V DS R @DS(on),TY |
|
|
|
|
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VS80110AT designed by the trench processing techniques to achieve extremely low on-resistance. Additional fea |
|
|
|
|
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET ♦Low On-Resistance ♦Fast Switching ♦100% Avalanche Tested ♦Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, RoHS Compliant ♦ Description VS80110ATD designed by the trench processing techniques to achieve extremely low on-resistance. Additional fe |
|
|
|
|
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET ♦Low On-Resistance ♦Fast Switching ♦100% Avalanche Tested ♦Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, RoHS Compliant Description VS8066AD designed by the trench processing techniques to achieve extremely low on-resistance. fast switching sp |
|
|
|
|
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel Enhancement mode Very low on-resistance Fast Switching High conversion efficiency Pb-free lead plating; RoHS compliant VS8068AD 80V/68A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 80 |
|
|
|
|
Vanguard Semiconductor |
Dual N-Channel Advanced Power MOSFET Ron(typ.)=22 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant VS8205AS 20V/6A Daul N-Channel Advanced Power MOSFET Description VS8205AS designed by the trench processing techniques to achieve |
|
Desde 2024. D4U Semiconductor.
|