Vanguard International Semicon Hoja de datos

No.	parte #	Fabricante	Descripción
1	P2V28S30ATP-75	Vanguard International Semiconductor	128Mb SDRAM ITEM tCLK tRAS tRCD tAC tRC Icc1 Clock Cycle Time (Min.) CL=2 CL=3 -7 7ns 45ns CL=2 CL=3 V28S20D 20ns 5.4ns 63ns 85mA 85mA 85mA 1mA P2V28S20/30/40ATP -75 -8 10ns 7.5ns 45ns 20ns 6ns 5.4ns 67.5ns 85mA 85mA 85mA 1mA 10ns 8ns 48ns 20ns 6ns 6ns 70ns 85
2	VG36128161BT	Vanguard International Semiconductor	CMOS Synchronous Dynamic RAM • Single 3.3V ( ± 0.3V ) power supply • High speed clock cycle time -7H: 133MHz<2-2-2>, -7L: 133MHz<3-3-3>, -8H: 100MHz<2-2-2> • Fully synchronous operation referenced to clock rising edge • Possible to assert random column access in every cycle • Qu
3	VG36128401A	Vanguard International Semiconductor	CMOS Synchronous Dynamic RAM • Single 3.3V ( ± 0.3V) power supply • High speed clock cycle time : 7.5ns/10ns • Fully synchronous with all signals referenced to a positive clock edge • Programmable CAS Iatency (2,3) • Programmable burst length (1,2,4,8,& Full page) • Programmabl
4	VG36128801BT	Vanguard International Semiconductor	CMOS Synchronous Dynamic RAM • Single 3.3V ( ± 0.3V ) power supply • High speed clock cycle time -7H: 133MHz<2-2-2>, -7L: 133MHz<3-3-3>, -8H: 100MHz<2-2-2> • Fully synchronous operation referenced to clock rising edge • Possible to assert random column access in every cycle • Qu
5	VG3617161DT	Vanguard International Semiconductor	16Mb CMOS Synchronous Dynamic RAM • Single 3.3V +/- 0.3V power supply • Clock Frequency: 180MHz, 166MHz, 143MHz, 125MHz, 100MHz • Fully synchronous with all signals referenced to a positive clock edge • Programmable CAS Iatency (2,3) • Programmable burst length (1,2,4,8,& Full page)
6	VG3617801CT	Vanguard International Semiconductor	16Mb CMOS Synchronous Dynamic RAM • Single 3.3V( ± 0.3V ) power supply • Clock Frequency:100MHz • Fully synchronous with all signals referenced to a positive clock edge • Programmable CAS Iatency (2,3) • Programmable burst length (1,2,4,8,& Full page) • Programmable wrap sequence (S
7	VG3664321412BT	Vanguard International Semiconductor	CMOS Synchronous Dynamic RAM • Single 3.3V ( ± 0.3V ) power supply • High speed clock cycle time : 8/10 for LVTTL • High speed clock cycle time : 8/10 for SSTL - 3 • Fully synchronous with all signals referenced to a positive clock edge • Programmable CAS Iatency (2,3) • Program
8	VG36646141BT-10	Vanguard International Semiconductor	CMOS Synchronous Dynamic RAM • Single 3.3V ( ± 0.3V ) power supply • High speed clock cycle time : 8/10ns • Fully synchronous with all signals referenced to a positive clock edge • Programmable CAS Iatency (2,3) • Programmable burst length (1,2,4,8,&Full page) • Programmable wra
9	VG36648041BT-7	Vanguard International Semiconductor	CMOS Synchronous Dynamic RAM • Single 3.3V ( ± 0.3V ) power supply • High speed clock cycle time : 7/8ns • Fully synchronous with all signals referenced to a positive clock edge • Programmable CAS Iatency (2,3) • Programmable burst length (1,2,4,8,& Full page) • Programmable wra
10	P2V28S20ATP-7	Vanguard International Semiconductor	128Mb SDRAM ITEM tCLK tRAS tRCD tAC tRC Icc1 Clock Cycle Time (Min.) CL=2 CL=3 -7 7ns 45ns CL=2 CL=3 V28S20D 20ns 5.4ns 63ns 85mA 85mA 85mA 1mA P2V28S20/30/40ATP -75 -8 10ns 7.5ns 45ns 20ns 6ns 5.4ns 67.5ns 85mA 85mA 85mA 1mA 10ns 8ns 48ns 20ns 6ns 6ns 70ns 85
11	P2V28S20ATP-8	Vanguard International Semiconductor	128Mb SDRAM ITEM tCLK tRAS tRCD tAC tRC Icc1 Clock Cycle Time (Min.) CL=2 CL=3 -7 7ns 45ns CL=2 CL=3 V28S20D 20ns 5.4ns 63ns 85mA 85mA 85mA 1mA P2V28S20/30/40ATP -75 -8 10ns 7.5ns 45ns 20ns 6ns 5.4ns 67.5ns 85mA 85mA 85mA 1mA 10ns 8ns 48ns 20ns 6ns 6ns 70ns 85
12	P2V28S20DTP-7	Vanguard International Semiconductor	128Mb SDRAM ITEM tCLK tRAS tRCD tAC tRC Icc1 Clock Cycle Time (Min.) CL=2 CL=3 -7 7ns 45ns CL=2 CL=3 V28S20D 20ns 5.4ns 63ns 85mA 85mA 85mA 1mA P2V28S20/30/40ATP -75 -8 10ns 7.5ns 45ns 20ns 6ns 5.4ns 67.5ns 85mA 85mA 85mA 1mA 10ns 8ns 48ns 20ns 6ns 6ns 70ns 85
13	P2V28S30ATP-8	Vanguard International Semiconductor	128Mb SDRAM ITEM tCLK tRAS tRCD tAC tRC Icc1 Clock Cycle Time (Min.) CL=2 CL=3 -7 7ns 45ns CL=2 CL=3 V28S20D 20ns 5.4ns 63ns 85mA 85mA 85mA 1mA P2V28S20/30/40ATP -75 -8 10ns 7.5ns 45ns 20ns 6ns 5.4ns 67.5ns 85mA 85mA 85mA 1mA 10ns 8ns 48ns 20ns 6ns 6ns 70ns 85
14	P2V28S40ATP-7	Vanguard International Semiconductor	128Mb SDRAM ITEM tCLK tRAS tRCD tAC tRC Icc1 Clock Cycle Time (Min.) CL=2 CL=3 -7 7ns 45ns CL=2 CL=3 V28S20D 20ns 5.4ns 63ns 85mA 85mA 85mA 1mA P2V28S20/30/40ATP -75 -8 10ns 7.5ns 45ns 20ns 6ns 5.4ns 67.5ns 85mA 85mA 85mA 1mA 10ns 8ns 48ns 20ns 6ns 6ns 70ns 85
15	P2V28S40ATP-75	Vanguard International Semiconductor	128Mb SDRAM ITEM tCLK tRAS tRCD tAC tRC Icc1 Clock Cycle Time (Min.) CL=2 CL=3 -7 7ns 45ns CL=2 CL=3 V28S20D 20ns 5.4ns 63ns 85mA 85mA 85mA 1mA P2V28S20/30/40ATP -75 -8 10ns 7.5ns 45ns 20ns 6ns 5.4ns 67.5ns 85mA 85mA 85mA 1mA 10ns 8ns 48ns 20ns 6ns 6ns 70ns 85
16	VG36128161A	Vanguard International Semiconductor	CMOS Synchronous Dynamic RAM • Single 3.3V ( ± 0.3V) power supply • High speed clock cycle time : 7.5ns/10ns • Fully synchronous with all signals referenced to a positive clock edge • Programmable CAS Iatency (2,3) • Programmable burst length (1,2,4,8,& Full page) • Programmabl
17	VG36128401BT	Vanguard International Semiconductor	CMOS Synchronous Dynamic RAM • Single 3.3V ( ± 0.3V ) power supply • High speed clock cycle time -7H: 133MHz<2-2-2>, -7L: 133MHz<3-3-3>, -8H: 100MHz<2-2-2> • Fully synchronous operation referenced to clock rising edge • Possible to assert random column access in every cycle • Qu
18	VG36128801A	Vanguard International Semiconductor	CMOS Synchronous Dynamic RAM • Single 3.3V ( ± 0.3V) power supply • High speed clock cycle time : 7.5ns/10ns • Fully synchronous with all signals referenced to a positive clock edge • Programmable CAS Iatency (2,3) • Programmable burst length (1,2,4,8,& Full page) • Programmabl
19	VG36256161A	Vanguard International Semiconductor	CMOS Synchronous Dynamic RAM • Single 3.3V ( ± 0.3V) power supply • High speed clock cycle time : 7.5ns/10ns • Fully synchronous with all signals referenced to a positive clock edge • Programmable CAS Iatency (2,3) • Programmable burst length (1,2,4,8,& Full page) • Programmabl
20	VG36256401A	Vanguard International Semiconductor	CMOS Synchronous Dynamic RAM • Single 3.3V ( ± 0.3V) power supply • High speed clock cycle time : 7.5ns/10ns • Fully synchronous with all signals referenced to a positive clock edge • Programmable CAS Iatency (2,3) • Programmable burst length (1,2,4,8,& Full page) • Programmabl