| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo Semicon Device |
Frequency characteristics Hz) 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (6.3V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. V.P.S test conditions : 230deg.C×75s×2times (V.P.S=Vapor Phase Solderin |
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Sanyo Semicon Device |
CRT Display Video Output Amplifier |
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Sanyo Semicon Device |
OS-CON Hz) 200 180 160 140 120 100 80 60 40 20 0 10000 Leakage current (6.3V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. (V.P.S = Vapor Phase Soldering method) Note: V.P.S test condition |
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Electronic Devices |
(KVPxx) Kilovolt Rectifier Assemblies 9 .75 46 .75 53 .75 65 200 NANOSECOND RECOVERY (FIG.4) .90 10 .90 11 .90 12 .90 13 .90 16 .90 17 .90 25 .70 30 .70 36 .70 43 .70 50 .70 58 .70 72 t a S a e h t e U 4 .c 2.5 2.5 3.0 3.0 3.0 3.5 5.0 5.5 6.0 6.0 6.5 6.5 7.0 m o 1 3 Dim ensi on C |
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VIC |
SURFACE MOUNT TVS Diodes Applications n 400 watts Peak Pulse Power n Power lines (10/1000 μs) n Automotive and Telecommunication n Response Time is Typically < 1 ns n Computers &Consumer Electronics n Excellent Clamping Capability n Industrial Electronics VnP4GlSas |
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Desde 2024. D4U Semiconductor.
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