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VBsemi |
N-Channel MOSFET • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: D TO-252 www.VBsemi.com G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Volt |
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VBsemi |
N-Channel MOSFET • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested TO-263 D G Top View S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate- |
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VBsemi |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unl |
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VBsemi |
N-Channel MOSFET • TrenchFET® Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D D2PAK (TO-263) G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Vo |
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Desde 2024. D4U Semiconductor.
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