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UniverChipSemi |
P-Channel Enhancement Mode MOSFET -30V/-4.3A, RDS(ON)=42mΩ (typ.)@VGS=-10V -30V/-3.0A, RDS(ON)=68mΩ (typ.)@VGS=-4.5V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Full RoHS compliance SOT23-3L package design APP |
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UniverChipSemi |
N-Channel Enhancement Mode MOSFET 20V/5.0A, RDS(ON)=30mΩ (typ.)@VGS=4.5V 20V/4.5A, RDS(ON)=42mΩ (typ.)@VGS=2.5V 20V/3.8A, RDS(ON)=50mΩ (typ.)@VGS=1.8V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Full RoHS complia |
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UniverChipSemi |
P-Channel Enhancement Mode MOSFET -30V/-2.6A, RDS(ON)=88mΩ (typ.)@VGS=-10V -30V/-2.0A, RDS(ON)=103mΩ (typ.)@VGS=-4.5V -30V/-1.0A, RDS(ON)=139mΩ (typ.)@VGS=-2.5V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Full Ro |
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UniverChipSemi |
P-Channel Enhancement Mode MOSFET -20V/-4.0A, RDS(ON)=35mΩ (typ.)@VGS=-4.5V -20V/-4.0A,RDS(ON)=46mΩ (typ.)@VGS=-2.5V -20V/-2.0A,RDS(ON)=70mΩ (typ.)@VGS=-1.8V -20V/-1.0A,RDS(ON)=85mΩ (typ.)@VGS=-1.5V Super high design for extremely low RDS(ON) Exceptional on-resistance and |
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UniverChipSemi |
P-Channel Enhancement Mode MOSFET -20V/-4.6A, RDS(ON)=35mΩ (typ.)@VGS=-4.5V -20V/-4.1A,RDS(ON)=45mΩ (typ.)@VGS=-2.5V -20V/-3.6A,RDS(ON)=53mΩ (typ.)@VGS=-1.8V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Full RoHS |
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UniverChipSemi |
N-Channel Enhancement Mode MOSFET 30V/6.0A, RDS(ON)=18mΩ (typ.)@VGS=10V 30V/4.8A, RDS(ON)=25mΩ (typ.)@VGS=4.5V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Full RoHS compliance SOT23-3L package design APPLICATIO |
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UniverChipSemi |
N-Channel Enhancement Mode MOSFET 30V/5.8A, RDS(ON)=18mΩ (typ.)@VGS=10V 30V/5.0A, RDS(ON)=24mΩ (typ.)@VGS=4.5V 30V/3.5A, RDS(ON)=30mΩ (typ.)@VGS=2.5V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Full RoHS complian |
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UniverChipSemi |
P-Channel Enhancement Mode MOSFET -30V/-4.3A, RDS(ON)=44mΩ (typ.)@VGS=-10V -30V/-3.5A, RDS(ON)=50mΩ (typ.)@VGS=-4.5V -30V/-2.5A, RDS(ON)=65mΩ (typ.)@VGS=-2.5V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Full RoHS |
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UniverChipSemi |
N-Channel Enhancement Mode MOSFET 30V/4.0A, RDS(ON)=43mΩ (typ.)@VGS=10V 30V/3.0A, RDS(ON)=47mΩ (typ.)@VGS=4.5V 30V/2.0A, RDS(ON)=60mΩ (typ.)@VGS=2.5V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Full RoHS complian |
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Desde 2024. D4U Semiconductor.
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