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Unity Opto Technology |
GaAlAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE l Selected to specific on-line intensity and radiant intensity ranges 1.0MIN. (.039) 2.54±0.08 (.100±.003) (SEE NOTE 3) l Low cost , plastic side looking package C A Notes : 1. All dimensions are in millimeters.(inches). 2. Protruded resin unde |
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Unity Opto Technology |
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE l SEE NOTE 2 FLAT DENOTES CATHODE High radiant power and high radiantintensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 16° 2.54NOM. (.100) SEE NOTE 3 1.00MIN. (.040) 0 |
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Unity Opto Technology |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE l 1.00 (.040) SEE NOTE 2 FLAT DENOTES CATHODE Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ 5mm ) package Peak wavelength λp = 880 nm Good spectral matching to si-photodetector Radiation angle : 20° 2.54NOM. (.100) SEE NOTE |
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Unity Opto Technology |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE l FLAT DENOTES CATHODE Ultra-High radiant incidence High response speed High modulation bandwidth Standard T-1 3/4 ( φ 5mm ) package Radiation angle : 15° Peak wavelength λp = 850 nm A 1.00MIN. (.040) 2.54NOM. (.100) SEE NOTE 3 0.50 TYP. (.020) 23. |
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Unity Opto Technology |
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE l l l l l High radiant power and high radiant intensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 45° 1.00 (.040) FLAT DENOTES CATHODE 23.4 0MIN. (.920) .50 TYP. (.020) |
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Unity Opto Technology |
AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE l 0.5 TYP. (.020) 1.0 MIN. (.039) 2.54 NOM. (.100) SEE NOTE 3 Selected to specific on-line intensity and radiant intensity l Low cost, plastic side looking package C A NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Lead sp |
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Unity Opto Technology |
GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE l CATHODE Selected to specific on-line intensity and 1.0 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3 0.5 TYP. (.020) radiant intensity ranges l Low cost, plastic side looking package l Mechanically and spectrally matched to the MID-11422 of phototra |
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Unity Opto Technology |
GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE l CATHODE 0.5 TYP. (.020) 1.0 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3 Selected to specific on-line intensity and radiant intensity ranges l Low cost , plastic side looking package Mechanically and spectrally matched to The MID-11422 of phototran |
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Unity Opto Technology |
AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE l Selected to specific on-line intensity and radiant intensity ranges 1.0min 0.48±0.05 (.019±.002) l Low cost, plastic side looking package 2.54 ±0.12 (.100±.005) (SEE NOTE 3) C A Notes : 1. All dimensions are in millimeters.(inches). 2. Prot |
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Unity Opto Technology |
GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE l Selected to specific on-line intensity and radiant intensity ranges 1.0MIN. (.039) 2.54±0.08 (.100±.003) (SEE NOTE 3) l l Low cost , plastic side looking package Mechanically and spectrally matched to The MID-14422 of phototransistor . C A Not |
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Unity Opto Technology |
GaAlAs/GaAs 1.8mm PACKAGE INFRARED EMITTING DIODE l l l l l 3.00 (.118) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Special 1.8mm package, radiation angle: 35° Peak wavelength λp = 940 nm Good spectral matching to Si-Photodetector 0.50 TYP. (.020) |
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Unity Opto Technology |
AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE l l l l l l 23.40MIN. (.920) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 ( φ 3mm ) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : ±15° |
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Unity Opto Technology |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE l 1.00 (.040) SEE NOTE 2 FLAT DENOTES CATHODE Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ 5mm ) package Peak wavelength λp = 880 nm Good spectral matching to si-photodetector Radiation angle : 16° 2.54NOM. (.100) SEE NOTE |
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Unity Opto Technology |
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE l l l l l High radiant power and high radiant intensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 16° 1.00 (.040) FLAT DENOTES CATHODE 23.4 0MIN. (.920) 0.50 TYP. (.020 |
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Unity Opto Technology |
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE l 23.40 MIN. (.920) 0.50 TYP. (.020) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ 5mm ) package, radiation angle : 20° Peak wavelength λp = 940 nm Good spectral matching to si-p |
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Unity Opto Technology |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE l FLAT DENOTES CATHODE Ultra-High radiant incidence Ultra-high speed response High modulation bandwidth Standard T-1 3/4 ( φ 5mm ) package Radiation angle : 20° Peak wavelength λp = 850 nm A 1.00MIN. (.040) 2.54NOM. (.100) SEE NOTE 3 0.50 TYP. (.02 |
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Unity Opto Technology |
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE SEE NOTE 2 l l l l l 1.00 (.039) High radiant power and high radiant intensity FLAT DENOTES CATHODE Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ 5mm ) package, radiant angle : 30° Peak wavelength λp = 940 nm Good spectral |
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Unity Opto Technology |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE ultra-high power, high response speed and molded package with higher radiant intensity. In addition to improving the S/N ratio in applied optical systems, the MIE-534H4 has greatly improved long-distance characteristics as well as significantly incre |
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Unity Opto Technology |
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE l l l l l High radiant power and high radiant intensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 45° 1.00 (.040) FLAT DENOTES CATHODE 23.4 0MIN. (.920) .50 TYP. (.020) |
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Unity Opto Technology |
GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE l CATHODE 0.50 TYP. (.020) 1.00 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3 Selected to specific on-line intensity and radiant intensity ranges l Low cost, plastic side looking package C A l Mechanically and spectrally matched to The MID-11422 Ph |
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Desde 2024. D4U Semiconductor.
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