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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) ≤ 45 mΩ @ VGS=4.5V, ID=4.2A * RDS(ON) ≤ 80 mΩ @ VGS=2.5V, ID=3.6A * Ultra Low Gate Charge (Max. 12nC ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability SYMBOL 3.Drain Power MOSFET 1.Gate 2.Source |
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Desde 2024. D4U Semiconductor.
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