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Unisonic Technologies |
700 VOLTS N-CHANNEL POWER MOSFET * RDS(ON) ≤4.0Ω @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain www.DataSheet.net/ 1.G |
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Unisonic Technologies |
700 VOLTS N-CHANNEL POWER MOSFET * RDS(ON) ≤4.0Ω @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain www.DataSheet.net/ 1.G |
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Unisonic Technologies |
700 VOLTS N-CHANNEL POWER MOSFET * RDS(ON) ≤4.0Ω @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL www.DataSheet.net/ ORDERING |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) <4.2Ω @VGS = 10 V * Low reverse transfer capacitance * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen F |
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Desde 2024. D4U Semiconductor.
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