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Unisonic Technologies |
N-CHANNEL POWER MOSFET * VDS = 600V, ID = 3A * RDS(ON) < 3.6Ω @VGS = 10 V * Ultra low gate charge ( typical 18 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high rugge |
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Unisonic Technologies |
600V N-CHANNEL POWER MOSFET * VDS = 600V, ID = 3A * RDS(ON) = 3.6Ω @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high rugg |
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Unisonic Technologies |
600V N-CHANNEL POWER MOSFET * RDS(ON) = 3.6Ω @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Dr |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) < 3.2Ω @ VGS = 10 V, ID = 1.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 3N60KL-TA3 |
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Unisonic Technologies |
600V N-CHANNEL POWER MOSFET * VDS = 600V, ID = 3A * RDS(ON) < 3.6Ω @VGS = 10 V * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 1 1 1 Power MOSFET TO-220F TO-220F2 TO-252 ORDERING INFORMATION Note: Ordering Nu |
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Unisonic Technologies |
650V N-CHANNEL POWER MOSFET * RDS(ON) = 3.8Ω @VGS = 10 V * Ultra low gate charge ( typical 10nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Dra |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) < 3.6Ω @ VGS = 10 V, ID = 1.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R205 |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) < 4.0Ω @ VGS = 10V, ID = 1.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R205- |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) < 3.8Ω @ VGS = 10V, ID = 1.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package Pin Assig |
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Unisonic Technologies |
650V N-CHANNEL POWER MOSFET * RDS(ON) = 3.8Ω @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL www. |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) < 3.5Ω @ VGS = 10V, ID = 1.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N65KL-TN3-R 3N65 |
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Desde 2024. D4U Semiconductor.
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