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Unisonic Technologies 2N2 DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
2N2955

Unisonic Technologies
SILICON PNP TRANSISTOR
TA=25C IBM 15 A PD 90 W Max. Operating Junction Temperature TJ +200 C Storage Temperature TSTG -65 ~ 200 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings ar
Datasheet
2
UTC2N2955

Unisonic Technologies
SILICON PNP TRANSISTOR
mA, IB=0V Ic=0.2 A, RBE=100 Ohms VCE=30V,IB=0 VCE=100V,VBE(off)=1.5V. VCE=100V,VBE(off)=1.5V, Ta=150°C VBE=7V,IC=0 Ic=4A,VCE=4V, Ic=10A,VCE=4V Ic=4A,IB=400mA Ic=10A,IB=3.3A MIN 60 70 TYP MAX UNIT V V mA mA 0.7 1.0 5.0 5.0 20 5 70 1.1 3.0 Emitte
Datasheet
3
22N20

Unisonic Technologies
N-Channel Power MOSFET
* Fast switching * RDS(on) < 0.14Ω @ VGS = 10 V, ID=11A * Typically 20nC low gate charge * 100% avalanche tested * Typically 25pF Low CRSS * Improved dv/dt capability
 SYMBOL Power MOSFET
 ORDERING INFORMATION Ordering Number Lead Free Halogen
Datasheet
4
12N25V

UNISONIC TECHNOLOGIES
12A 250V N-CHANNEL POWER MOSFET
* ID=12A * VDS = 250V * RDS(ON)=0.34Ω @ VGS=10V * High switching speed * 100% avalanche tested „ SYMBOL „ ORDERING INFORMATION Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free 12N25VL-TA3-T 12N25VG-T
Datasheet



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