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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) ≤ 0.42 Ω @ VGS=10V, ID=5.5A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 9 QW-R209-040.L 11NM60 ORDER |
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UNISONIC TECHNOLOGIES |
N-CHANNEL MOSFET * RDS(ON) ≤ 1.0Ω @ VGS=10V, ID=5.5A * High switching speed 1 TO-220F2 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 11N80L-TF1-T 11N80G-TF1-T TO-220F1 11N80L-TF2-T 11N80G-TF2-T TO-220F2 11N80L-T3P-T 11N80G-T3P-T |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) ≤ 0.58 Ω @ VGS=10V, ID=5.5A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 9 QW-R209-041.H 11NM70 ORDER |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * Low Gate Charge: 43nC (TYP.) * 11A, 500V, RDS(ON)=0.55Ω @ VGS=10V * Fast Switching * Low CRSS: 25pF (TYP.) * With 100% Avalanche Tested * Improved dv/dt Capability * Fast Recovery Body Diode: 90ns (TYP.) SYMBOL D G S ORDERING INFORMATION |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(on) < 1.1Ω @ VGS = 10V, ID = 5.5A * High switching speed * Improved dv/dt capability * 100% avalanche tested SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 11N90L-TA3-T 11N90G-TA3-T TO-220 |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) < 1.00 Ω @ VGS = 10 V, ID = 5.5 A * Fast Switching * With 100% Avalanche Tested SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 11N60KL-TF2-T 11N60KG-TF2-T TO-22 |
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Unisonic Technologies |
N-Channel MOSFET * RDS(ON) < 0.38Ω @ VGS=10V, ID=5.7A * High switching speed * Low effective output capacitance (Typ.=95pF) * Low gate charge (Typ.=40nC) SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11NM40L-TF3-T 11NM40G- |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) ≤ 0.43 Ω @ VGS=10V, ID=5.5A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested Power MOSFET SYMBOL www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 9 QW-R209-039.J 11NM65 Power |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) ≤ 0.6Ω @ VGS=10V, ID=5.5A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested 1 TO-251 1 TO-252 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11NM65L- |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) < 0.5Ω @ VGS=10V, ID=5.5A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11NM60L-TA3-T 11NM60G-TA3-T 11NM60L-TF3- |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) < 0.55Ω @ VGS = 10 V, ID = 5.5 A * Fast Switching * With 100% Avalanche Tested SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11N50KL-TF2-T 11N50KG-TF2-T Note: Pin Assig |
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Unisonic Technologies |
SWITCHING DIODE * High frequency application * High reliability SYMBOL DIODE ORDERING INFORMATION Ordering Number Lead Free Halogen Free UMR11NL-AL6-R UMR11NG-AL6-R Note: Pin Assignment: A: Anode K: Cathode UMR11NL-AL6-R (1)Packing Type (2)Package Type |
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Desde 2024. D4U Semiconductor.
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