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N-CHANNEL MOSFET * RDS(ON) ≤ 72 mΩ @ VGS=10V, ID=7.5A RDS(ON) ≤ 84 mΩ @ VGS=4.5V, ID=7.5A * High Switching Speed * High Cell Density Trench Technology SYMBOL Drain 1 TO-252 SOP-8 Gate Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT15 |
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30V N-CHANNEL POWER MOSFET TO-220 * RDS(ON) ≤ 4.2 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 6.0 mΩ @ VGS=4.5 V, ID=40A PDFN5×6 * RDS(ON) ≤ 4.0 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 5.8 mΩ @ VGS=4.5 V, ID=40A * Excellent gate charge * Very low on-resistance RDS(ON) SYMBOL Power MOSFET |
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TRIACS ms period) PG(AV) 0.5 W Operating Junction Temperature Tj 125 °C Storage Temperature Tstg -40~150 °C *Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of |
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TRIACS g (t =10 ms) I2t 15 A2s Repetitive Rate of Rise of On-state Current after Triggering ITM=12 A, IG=0.2 A, dIG/dt=0.2A/µs T2 + G+ T2 + GT2 - GT2 - G+ dIT /dt 50 50 50 A/µs 10 Peak Gate Voltage VGM 5 V Peak Gate Current Peak Gate Power IGM P |
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DUAL-CHANNEL POWER MOSFET *N-CHANNEL RDS(on) ≤ 60 mΩ @ VGS=10V, ID=12A RDS(on) ≤ 110 mΩ @ VGS=4.5V, ID=8.0A *P-CHANNEL RDS(on) ≤ 115 mΩ @ VGS=-10V, ID=-12A RDS(on) ≤ 170 mΩ @ VGS=-4.5V, ID=-8.0A * High switching speed SYMBOL Power MOSFET ORDERING INFORMATION Ordering N |
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60V N-CHANNEL POWER MOSFET * RDS(ON) ≤ 3.5 mΩ @ VGS=10V, ID=75A RDS(ON) ≤ 5.0 mΩ @ VGS=4.5V, ID=50A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2024 Unisonic Technologies C |
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TRIACS 50 °C *Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6A/µs. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-012,C UTC |
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TRIACS epetitive peak on-state current t = 20ms (Full sine wave; TJ = 25°C prior to surge) I2t for fusing t = 16.7 ms t = 10 ms IT(RMS) ITSM I2t 12 A 95 105 A 45 A2s Repetitive rate of rise of on-state current after triggering ITM=20A; IG=0.2A; dIG |
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N-CHANNEL POWER MOSFET * RDS(ON) ≤ 4.0 mΩ @ VGS=10V, ID=60A RDS(ON) ≤ 6.6 mΩ @ VGS=4.5V, ID=60A * Fast Switching * 100% Avalanche Tested * High Power and Current Handling Capability SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free P |
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TRIAC * High bidirectional transient * High thermal cycling performance * Blocking voltage capability SYMBOL TRIAC ORDERING INFORMATION Order Number Normal Lead Free Plating UT139FL-x-TA3-T UT139FG-x-TA3-T UT139GL-x-TA3-T UT139GP-x-TA3-T Note |
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N-CHANNEL POWER MOSFET * RDS(ON) ≤ 0.5 Ω @ VGS=10V, ID=0.5A RDS(ON) ≤ 0.55 Ω @ VGS=4.5V, ID=0.5A * Simple drive requirement SOT-23-3 (JEDEC TO-236) SOT-23 (EIAJ SC-59) 1 TO-252 SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT1N10L |
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P-CHANNEL POWER MOSFET * RDS(ON) ≤ 64 mΩ @ VGS=-10V, ID=-7.5A RDS(ON) ≤ 100 mΩ @ VGS=-10V, ID=-7.5A * High Switching Speed SYMBOL 1 TO-252 SOP-8 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT15P04L-TN3-R UT15P04G-TN3-R TO-252 UT15P04L- |
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TRIACS LOGIC LEVEL Halogen Free Data Code www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R401-006.H UT131 TRIAC ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT UT131-5 500 V Repetitive Peak Off-State Voltage (Note 2) |
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TRIACS ages UT134E-6 VDRM 600 UT134E-8 800 RMS on-state current full sine wave; Tmb ≤107°C IT(RMS) 4 A Non-repetitive peak on-state current (Full sine wave; TJ = 25°C prior to surge) t = 20ms t = 16.7 ms ITSM 25 27 A I2t for fusing t = 10 ms |
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TRIACS e IT(RMS) A ITSM I2t 25 27 3.1 A A2s dIT /dt 50 50 50 10 5 2 5 0.5 -40 ~ 150 125 A/μs VGM IGM PGM PG(AV) Tstg Tj V A W W ℃ ℃ UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-008,B UTC UT134F/G TRIAC *Although not recommended, off-state |
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TRIACS e IT(RMS) A ITSM I2t 25 27 3.1 A A2s dIT /dt 50 50 50 10 5 2 5 0.5 -40 ~ 150 125 A/μs VGM IGM PGM PG(AV) Tstg Tj V A W W ℃ ℃ UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-008,B UTC UT134F/G TRIAC *Although not recommended, off-state |
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TRIACS (RMS) ITSM I2t 4A 25 A 27 A 3.1 A2s Repetitive Rate of Rise ITM=6A, of On-State Current IG=0.2A, After Triggering dIG/dt=0.2A/μs T2+ G+ T2+ GT2- GT2- G+ dIT/dt 50 A/μs 50 A/μs 50 A/μs 10 A/μs Peak Gate Voltage Peak Gate Current VGM IGM 5V |
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TRIACS gate power (over any 20 ms period) PG(AV) 0.5 W ℃ Storage temperature Tstg -40 ~ 150 ℃ Operating junction temperature Tj 125 *Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-st |
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TRIACS gate power (over any 20 ms period) PG(AV) 0.5 W ℃ Storage temperature Tstg -40 ~ 150 ℃ Operating junction temperature Tj 125 *Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-st |
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TRIACS 5 W ℃ Storage temperature Tstg -40 ~ 150 ℃ Operating junction temperature Tj 125 *Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-state. The rate of rise of current should not |
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Desde 2024. D4U Semiconductor.
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