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NPN SILICON TRANSISTOR * Collector-emitter saturation voltage:50V * High collector current gain (hFE) under high IC conditions * High collector current capability * Higher efficiency resulting in less heat generation * Complementary to UTC USS5350 ORDERING INFORMATION |
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AC LINE SWITCH * Blocking voltage: VDRM / VRRM = +/-700V * Switch integrated driver * High noise immunity: static dV/dt >500V/μs * Enables equipment to meet IEC 61000-4-5 Standard SYMBOL SCR ORDERING INFORMATION Ordering Number Lead Free Halogen Free USS1 |
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PNP TRANSISTORS * Very low collector-emitter saturation voltage VCE(SAT) * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB |
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NPN SILICON TRANSISTOR * Less heat dissipation due to high efficiency * Low collector-emitter saturation voltage * High collector current capability * High collector current gain under high collector current condition ORDERING INFORMATION Ordering Number Lead Free Ha |
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AC POWER SWITCH * Blocking Voltage : VDRM / VRRM = ±800V * Gate triggering current : IGT < 30 mA * Snubberless turn off commutation:(dI/dt)c > 4.5A/ms * Enables equipment to meet IEC 61000-4-5 Standard SYMBOL SCR ORDERING INFORMATION Ordering Number Lead Fre |
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PNP TRANSISTOR * Low collector-emitter saturation voltage VCE(SAT) * High collector current capability: IC and ICM * Higher efficiency leading to less heat generation * Reduced printed-circuit board requirements * Complement: USS4350 ORDERING INFORMATION Orderi |
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NPN TRANSISTOR * 5 amps continuous current * Up to 20 amps peak current * Very low saturation voltages * Excellent hFE characteristics up to 10 amps ORDERING INFORMATION Ordering Number Lead Free Halogen Free USS4041NXL-AB3-R USS4041NXG-AB3-R Note: Pin As |
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PNP TRANSISTORS * Very low collector-emitter saturation voltage VCE(SAT) * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB |
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NPN TRANSISTORS * Low collector-emitter saturation voltage VCE(SAT) * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than |
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NPN TRANSISTORS * Low collector-emitter saturation voltage VCE(SAT) * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than |
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BIPOLAR LATCH TYPE HALL EFFECT * Wide Temperature Operation Range of -30°С ~ +125°С * Alternating Magnetic Field Operation * Built-in Protection Diode * TTL and MOS IC are Directly Drivable by the Output * The life is Semi Permanent because it Employs Contact-Less Parts ORDERIN |
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HALL EFFECT * Wide Temperature Operation Range of -30°С ~ +125°С * Alternating Magnetic Field Operation * Built-in Protection Diode * TTL and MOS IC are Directly Drivable by the Output * The life is Semi Permanent because it Employs Contact-Less Parts ORDERIN |
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1.0A PNP TRANSISTOR * Low collector-emitter saturation voltage VCE(SAT) * High collector current capability: IC and ICM * Higher efficiency leading to less heat generation * Reduced printed-circuit board requirements * Complement: USSN0140 ORDERING INFORMATION Order |
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Desde 2024. D4U Semiconductor.
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