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NPN BIPOLAR POWER TRANSISTOR * VCEO(SUS) 400V * 700V Blocking Capability 1 TO-220F ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13007L-XS-TA3-T MJE13007G-XS-TA3-T MJE13007L-XS-TF3-T MJE13007G-XS-TF3-T Note: Pin Assignment: B: Base C: Collector E: E |
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NPN BIPOLAR POWER TRANSISTOR * VCEO(SUS) 400V * 700V Blocking Capability ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MJE13007L-TA3-T MJE13007G-TA3-T TO-220 MJE13007L-TF3-T MJE13007G-TF3-T TO-220F MJE13007L-TF1-T MJE13007G-TF1-T TO-220F1 M |
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NPN SILICON POWER TRANSISTOR * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/rela |
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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antiparallel Collector-Emitter Diode INTERNAL SCHEMATIC DIAGRAM C (2) B (1) E (3) ORDERING INFORMATION Ordering Number Lead Fre |
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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antiparallel Collector-Emitter Diode INTERNAL SCHEMATIC DIAGRAM ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE |
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SWITCHMODE SERIES NPN SWITCHMODE SERIES NPN TRANSISTORS * VCEO 400V and 300V * Reverse Bias SOA with Inductive Loads @ TC = 100°C * Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C tC @ 8A, 100°C is 120 ns (Typ.). *700 V Blocking Capability *SOA and Switching Applications Information. ORDERING INF |
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NPN SILICON TRANSISTOR * High Breakdown Voltage * High Current Capability * High Switching Speed * High Reliability * RoHS-Compliant Product INTERNAL SCHEMATIC DIAGRAM C (2) B (1) E (3) ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free MJE13009 |
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NPN SILICON POWER TRANSISTORS * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 700V blocking capability * SOA and switching applications information APPLICATIONS * S |
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NPN SILICON POWER TRANSISTOR *Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. *Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A *Switch Time- tf =0.7μs(Max.) @IC=1.0A. ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13002 |
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NPN SILICON POWER TRANSISTORS * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 700V blocking capability * SOA and switching applications information APPLICATIONS * Swi |
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NPN SILICON POWER TRANSISTOR * Reverse biased SOA with inductive load @ Tc=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tc = 290ns @ 1A, 100°C. * 700V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/rela |
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SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS * VCEO 400V and 300 V * Reverse Bias SOA with Inductive Loads @ TC = 100°C * Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C tC @ 8 A, 100°C is 120 ns (Typ.) * 700 V Blocking Capability * SOA and Switching Applications Information ORDERING INF |
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NPN SILICON TRANSISTOR * Reverse biased SOA with inductive load @ Tc=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tc = 290ns @ 1A, 100°C. * 700V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/rela |
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NPN SILICON TRANSISTOR * High Breakdown Voltage * High Current Capability * High Switching Speed * High Reliability * RoHS-Compliant Product NPN SILICON TRANSISTOR 1 1 TO-220 TO-220F 1 TO-251 1 TO-252 1 TO-126 1 TO-126S INTERNAL SCHEMATIC DIAGRAM 2.Collector 1 |
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NPN SILICON POWER TRANSISTOR * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-A-B MJE13001G-P-x-T92-A-B MJE13001L-P-x-T92-A-K MJE13001G-P-x-T92-A-K MJE13001L-P-x-T92-F-B MJ |
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HIGH VOLTAGE TRANSISTOR e Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL |
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NPN EPITAXIAL SILICON TRANSISTOR * High voltage, high speed switching * High reliability 1 TO-220F *Pb-free plating product number: MJE13011L PIN CONFIGURATION www.DataSheet4U.com PIN NO. 1 2 3 PIN NAME BASE COLLECTOR EMITTER ORDERING INFORMATION Order Number Normal Lead Free |
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HIGH VOLTAGE TRANSISTOR SISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector current Base Current TO-220 TO-220F1 Power Dissipation (TA=25°C) TO-251 TO-252 SYMBOL VCBO VCEO VEBO IC IB PD RATINGS -70 - |
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NPN SILICON POWER TRANSISTORS * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 700V blocking capability * SOA and switching applications information APPLICATIONS * S |
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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR *Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. *Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A *Switch Time- tf =0.7μs(Max.) @Ic=1.0A. ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package |
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Desde 2024. D4U Semiconductor.
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