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N-CHANNEL MOSFET * RDS(ON) ≤ 35 mΩ @ VGS=10V, ID=40A * Fast body diode MOSFET technology * Low switching losses due to reduced Qrr * Single Pulse Avalanche Energy Rated * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Avalanche energ |
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N-CHANNEL POWER MOSFET * RDS(ON) :12 mΩ (Typ.) * Lower gate-drain charge for lower switching losses * Perfect avalanche voltage and current performance * Fully characterized capacitance including effective COSS to simplify design SYMBOL 2.Drain Power MOSFET 1 TO-220 1 |
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Desde 2024. D4U Semiconductor.
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