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N-CHANNEL POWER MOSFET * RDS(ON) ≤ 4.6 Ω @ VGS=10V, ID=1.5A * Fast body diode MOSFET technology * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Note: Ordering Number Lead F |
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Desde 2024. D4U Semiconductor.
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