| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
UTC |
VOLTAGE DETECTORS 1 *High-accuracy detection voltage : ±2% *Detect voltage range : 0.9V to 6.2V in 0.1V increments *Detect voltage temperature characteristics: TYP. ±100ppm/°С. *Wide operating voltage range : 0.7V to 10.0V *Low current consumption : TYP 0.7μA(at VIN= |
|
|
|
|
UTC |
NPN SILICON RF TRANSISTOR * Maximum available power gain: MAG=19dB TYP. @ VCE=2V, IC=20mA, f=2GHz * fT=25GHz technology adopted ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC5508L-x-AL6-R 2SC5508G-x-AL6-R SOT-363 Note: Pin Assignment: E: Em |
|
|
|
|
UTC |
NPN SILICON RF TRANSISTOR * Maximum available power gain: MAG=19dB TYP. @ VCE=2V, IC=20mA, f=2GHz * fT=25GHz technology adopted ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC5508L-x-AL6-R 2SC5508G-x-AL6-R SOT-363 Note: Pin Assignment: E: Em |
|
|
|
|
UTC |
NPN EPITAXIAL SILICON TRANSISTOR *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. *High allowable power dissipation. *Complementary to 2SA2016. 1 APPLICATIONS *Relay drivers, lamp drivers, motor drivers, strobes SOT-89 1:EMITTER 2:CO |
|
|
|
|
UTC |
PNP SILICON TRANSISTOR |
|
|
|
|
UTC |
PNP SILICON TRANSISTOR |
|
|
|
|
UTC |
PNP SILICON TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|