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(MMBTA44 / MMBTA45) HIGH VOLTAGE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR *Collector-Emitter voltage: VCEO=400V (UTC MMBTA44) VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW 3 NPN EPITAXIAL SILICON TRANSISTOR 1 2 MARKING (MMBTA44) SOT-23 3D * Pb-fr |
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UTC |
LOW POWER AMPLIFIER * Low current consumption. * 16Ω load drive capability. * Excellent reduced voltage characteristics. * High power supply ripple rejection. * Fewer external components required. * High voltage gain. * Less harmonic interference in radio band. * Built |
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UTC |
(MMBTA44 / MMBTA45) HIGH VOLTAGE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR *Collector-Emitter voltage: VCEO=400V (UTC MMBTA44) VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW 3 NPN EPITAXIAL SILICON TRANSISTOR 1 2 MARKING (MMBTA44) SOT-23 3D * Pb-fr |
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NPN TRANSISTOR * Collector-Emitter Voltage: * VCEO=400V (UTC MPSA44) * VCEO=350V (UTC MPSA45) * Collector Current up to 300mA 1 SOT-89 1 TO-252 1 TO-92 1 TO-92NL 1 TO-126 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MPSA44L-AB3-R |
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UTC |
HIGH VOLTAGE TRANSISTOR *Collector-Emitter voltage: VCEO=400V(PZTA44) VCEO=350V(PZTA45) *Collector current up to 300mA *Complement to PZTA94/93 *Collector Dissipation: Pc(max)=2W 1 2 3 4 APPLICATION *Telephone switching *High voltage switch SOT-223 1:EMITTER 2,4:COLL |
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Desde 2024. D4U Semiconductor.
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