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N-CHANNEL POWER MOSFET 1 TO-251 1 TO- 252 * RDS(ON) = 40mΩ@VGS = 10 V, ID=15A * Ultra low gate charge ( typical 20nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability SY |
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N-CHANNEL MOSFET * RDS(ON) < 0.14Ω @ VGS=10V, ID=15A * High Switching Speed * 100% Avalanche Tested SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 30NM65L-T47-T 30NM65G-T47-T 30NM65L-TA3-T 30NM65 |
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N-CHANNEL MOSFET * RDS(ON) < 170 mΩ @ VGS=10V, ID=15A * High Switching Speed * 100% Avalanche Tested SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 30NM70L-TF1-T 30NM70G-TF1-T 30NM70L-TF2-T 30N |
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900V N-CHANNEL SUPER-JUNCTION MOSFET * RDS(ON) ≤ 0.28 Ω @ VGS=10V, ID=15A * High Switching Speed * 100% Avalanche Tested SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 30NM90L-TA3-T 30NM90G-TA3-T 30NM90L-TF1-T 30NM90G-TF1-T 30NM90L-TF2-T 3 |
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N-CHANNEL POWER MOSFET * RDS(ON) = 40mΩ@VGS = 10 V * Ultra low gate charge ( typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability *Pb-free plating product numbe |
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N-CHANNEL POWER MOSFET 1 TO-251 1 TO- 252 * RDS(ON) = 40mΩ@VGS = 10 V, ID=15A * Ultra low gate charge ( typical 20nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability SY |
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N-CHANNEL MOSFET * High power and current handling capability * Low gate charge SYMBOL www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 10 QW-R209-108.M UTT130N06M Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen |
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N-CHANNEL MOSFET * RDS(ON) ≤ 16 mΩ @ VGS=10V, ID=15A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 1 TO-252 SOP-8 ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT30N06HL-TN3-R UT30N06HG-TN |
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N-CHANNEL POWER MOSFET * RDS(ON) ≤ 42 mΩ @ VGS=10V, ID=15A * High Switching Speed SYMBOL 1 TO-220 1 TO-252 SOP-8 1 PDFN5×6 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT30N15HL-TA3-T UT30N15HG-TA3-T TO-220 UT30N15HL-TN3-R UT30N15HG |
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N-CHANNEL POWER MOSFET * RDS(ON) ≤ 12 Ω @ VGS=0V, ID=150mA * Depletion Mode (Normally On) * Proprietary Advanced Planar Technology * Rugged Polysilicon Gate Cell Structure * Fast Switching Speed SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Ha |
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650V TRENCH GATE FIELD-STOP IGBT * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=30A, VGE=15V (TC =25°C) SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG30N65L-TA3-T UTG30N65G-TA3-T TO-22 |
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DUAL-CHANNEL POWER MOSFET * N-Channel RDS(on) ≤ 40 mΩ @ VGS=10V, ID=15A RDS(on) ≤ 60 mΩ @ VGS=4.5V, ID=15A * P-Channel RDS(on) ≤ 50 mΩ @ VGS=-10V, ID=-15A RDS(on) ≤ 80 mΩ @ VGS=-4.5V, ID=-15A * High switching speed SYMBOL D 1 TO-252-4 G1 G2 S1 N-Channel S2 P-Channel |
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650V N-CHANNEL MOSFET * RDS(ON) ≤ 0.15 Ω @ VGS=10V, ID=15A * Fast body diode MOSFET technology * Low switching losses due to reduced Qrr * Single Pulse Avalanche Energy Rated * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Avalanche ener |
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N-CHANNEL MOSFET * RDS(ON) ≤ 13mΩ @ VGS=10V, ID=15A RDS(ON) ≤ 25mΩ @ VGS=4.5V, ID=15A * High Switching Speed SYMBOL 1 Power MOSFET TO-251 SOP-8 ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT30N04L-TM3-T UT30N04G-TM3-T UT30N04L-S08-R UT30 |
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N-CHANNEL POWER MOSFET * High power and current handling capability * Low gate charge SYMBOL 1 TO-220 1 TO-252 ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT130N06HL-TA3-T UTT130N06HG-TA3-T UTT130N06HL-TN3-R UTT130N06HG-TN3-R Note: Pin Assign |
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N-CHANNEL MOSFET * RDS(ON) ≤ 0.13 Ω @ VGS=10V, ID=15A * Fast body diode MOSFET technology * High Switching Speed * 100% Avalanche Tested SYMBOL (2) Drain (5) Drain Power MOSFET (1) Gate (3) Source TO-220 / TO-220F1 TO-247 / TO-263 (1) Gate (2) Driver Source ( |
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SMPS N-CHANNEL IGBT * VCE(SAT) ≤ 2.8V @ IC=30A, VGE=15V * 1200V Switching SOA Capability * High switching speed * High input impedance * Low conduction loss SYMBOL Collector 1 TO-247 Gate Emitte ORDERING INFORMATION Ordering Number Lead Free Halogen Free Pac |
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SMPS N-CHANNEL IGBT * VCE(SAT) ≤ 2.3V @ IC=30A, VGE=15V * 600V Switching SOA Capability * High switching speed * High input impedance * Low conduction loss SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UPG30N60L-TA3-T UPG30N60G-TA |
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Desde 2024. D4U Semiconductor.
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