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600V N-CHANNEL POWER MOSFET * RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * Fast body diode MOSFET technology * Ultra Low gate charge (typical 16nC) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING I |
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N-CHANNEL MOSFET *Pb-free plating product number:12N60L * RDS(ON) = 0.7Ω @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capa |
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N-CHANNEL MOSFET * RDS(ON) < 0.7 Ω @ VGS = 10 V, ID = 6.0 A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 12N60L-TF |
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COMPLEMENTARY SILICON TRANSISTORS *High safe operating area(100 tested) 150W and 100V *Complement Characterized for linear operation *High DC Current Gain and low saturation voltage Hfe=15(8A 4V) Vce(sat)=1.4V(Ic=8A,Ib=0.8A) *For Low Distortion Complementary Designs TO-3 ABSOLUTE MA |
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N-CHANNEL MOSFET * RDS(ON) < 4.6 Ω @ VGS = 10V, ID =1A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-A4 |
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PROGRAMMABLE UNIJUNCTION TRANSISTOR * Low Forward Voltage * Low Offset Voltage * Low Gate to Anode Leakage Current * High Peak Output Voltage SYMBOL SCR ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N6027L-AB3-R 2N6027G-AB3-R 2N6027L-T92-B 2N6027G-T92-B 2N6 |
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N-CHANNEL POWER MOSFET * RDS(ON) ≤ 8.5Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 9 QW-R209-111. |
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N-CHANNEL POWER MOSFET 1 TO-220F1 * VDS = 600V, ID = 2A * RDS(ON) = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high |
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N-CHANNEL MOSFET * RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1 TO-251 1 TO-252 1.Gate 3.Source ORDERING INFORMATION Note: Ordering Number Lead Free |
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N-CHANNEL MOSFET * RDS(ON) ≤ 4.2 Ω @ VGS=10V, ID=1.0A * High Switching Speed 1 SOT-223 1 TO-220F 11 TO-220F1 TO-220F2 1 TO-251 1 TO-252 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 2N60L-AA3-R 2N |
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N-CHANNEL MOSFET * RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness Power MOSFET SYMBOL www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 7 QW-R502 |
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N-CHANNEL MOSFET * RDS(ON) < 5.0Ω @ VGS = 10V, ID =1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7 QW-R209-0 |
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650V N-CHANNEL POWER MOSFET * RDS(ON) ≤ 4.8 Ω @ VGS=10V, ID=1.0A * High Switching Speed SYMBOL 2.Drain Power MOSFET 1 TO-251 1 TO-251S4 1 TO-252 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N65L-TM3-T 2N65G-TM3-T 2N65L-TMS4-T 2N65G |
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650V N-CHANNEL POWER MOSFET * RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0A * Ultra Low gate charge (typical 45nC) * Low reverse transfer capacitance (CRSS = typical 9 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.D |
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VOLTAGE DETECTORS * High-accuracy detection voltage : ±2% * Detect voltage range : 1.3V to 6.0V in 0.1V increments * Detect voltage temperature characteristics: TYP.±100ppm/°C. * Wide operating voltage range : 0.7V to 10.0V * Low current consumption : TYP 0.7μA (at VI |
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NPN GENERAL PLANAR TRANSISTOR * High Power: 850mW * High Current: 1A ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2N6718L-x-AB3-R 2N6718G-x-AB3-R SOT-89 2N6718L-x-T6C-K 2N6718G-x-T6C-K TO-126C 2N6718L-x-T92-B 2N6718G-x-T92-B TO-92 2N6718L-x |
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SMPS N-CHANNEL IGBT * VCE(SAT) ≤ 2.5V @ IC=22A, VGE=15V * 600V Switching SOA Capability * High switching speed * High input impedance * Low conduction loss SYMBOL Collector 1 TO-247 Gate Emitte ORDERING INFORMATION Ordering Number Lead Free Halogen Free Pac |
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N-CHANNEL Power MOSFET * RDS(ON) < 10 Ω @ VGS=10V, ID=1.0A * High Switching Speed * 100% Avalanche Tested SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N65QL-TM3-T 2N65QG-TM3-T 2N65QL-TN3-R 2N65QG- |
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N-CHANNEL POWER MOSFET * RDS(ON) ≤ 0.85 Ω @ VGS=10V, ID=6.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness 1 TO-262 1 TO-263 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halo |
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Desde 2024. D4U Semiconductor.
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