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USHA |
SILICON PLASTIC POWER TRANSISTOR r Cutoff Current [VEB=7Vdc, IC=0] Voltage BVCBO 60 IEBO * ON CHARACTERISTICS (1): DC Current Gain [ Ic = 0.5 Adc , VCE = 5.0 Vdc ] [ Ic =3 Adc , VCE =5.0 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 3Adc , IB = 0.3Adc ) hFE 100 20 VCE(sat) E |
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USHA |
SILICON PLASTIC POWER TRANSISTOR toff Current [VEB=7Vdc, IC=0] Voltage BVCBO IEBO 60 * ON CHARACTERISTICS (1): DC Current Gain [ Ic = 0.5 Adc , VCE = 5.0 Vdc ] [ Ic =3 Adc , VCE =5.0 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 3Adc , IB = 0.3Adc ) Emitter –Base Saturation [ |
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Desde 2024. D4U Semiconductor.
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