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UNION OPTRONICS SLD DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
SLD-980-P50-300-05

UNION OPTRONICS
980nm Laser Diode
0 deg. Lasing Wavelength Po=50mW 965 980 995 nm // and are defined as the angle within which the intensity is 50% of the peak value. Typical characteristic curves Forward Voltage Forward Voltage (V) UNION OPTRONICS CORP. Peak 980nm Laser Dio
Datasheet
2
SLD-1310-P5-C-05

UNION OPTRONICS
1310nm Laser Diode Chips
oC Operation Voltage Vop Po = 5mW Slope Efficiency SE Po = 1 to 4mW Lasing Wavelength λ Po = 5mW Spectral Width ∆λ Po = 5mW Optical Output Power Po CW, Kink free P-I Kink Ki Po < 5mW Beam Divergence Parallel θ// Po = 5mW (FWHM) Perpend
Datasheet
3
SLD-635-P5-RG-466-1

UNION OPTRONICS
635nm Red Laser Diode Chips
Parallel θ// Po=5mW 6 7.5 11 (FWHM) Perpendicular θ⊥ Po=5mW 30 34 38 Lasing Wavelength λ Po=5mW 630 635 640 ◎θ// and θ⊥ are defined as the angle within which the intensity is 50% of the peak value. Unit mA mA Volt mW/mA μA deg. deg. nm
Datasheet
4
SLD-635-P5-C-N-RG-300-05

UNION OPTRONICS
635nm Red Laser Diode Chips
75mW-1.25mW 0.3 I3.75mW-I1.25mW 0.5 θ// Po=5mW 6 8 10 (FWHM) Perpendicular θ⊥ Po=5mW 30 35 38 Lasing Wavelength λ Po=5mW 620 635 640 ◎θ// and θ⊥ are defined as the angle within which the intensity is 50% of the peak value. ◎Measuring co
Datasheet
5
SLD-635-P5-C-N-RG-250-01

UNION OPTRONICS
635nm Red Laser Diode Chips
(FWHM) Perpendicular 3.75mW-1.25mW I3.75mW-I1.25mW 0.3 0.5 // Po=5mW 6 8 10 Po=5mW 30 35 38 Lasing Wavelength Po=5mW 620 635 640 // and are defined as the angle within which the intensity is 50% of the peak value. Measuring conditions : P
Datasheet
6
SLD-650-P5-C-300-04

UNION OPTRONICS
650nm Red Laser Diode Chips
- 2.2 2.8 Volt Slope Efficiency η 3mW-1mW I3mW-I1mW 0.4 0.9 - mW/mA Beam Divergence Parallel θ// Po=5mW 5 7 12 deg. (FWHM) Perpendicular θ⊥ Po=5mW 30 38 42 deg. Lasing Wavelength λ Po=5mW 640 652 665 nm ◎θ// and θ⊥ are defined as the a
Datasheet
7
SLD-650-P5-CS-HR4-04

UNION OPTRONICS
650nm Red Laser Diode Chips on Submount
650nm Laser Diode Chip on Submount Un-cooled Laser chip on submount with MQW structure Gold coated copper submount External dimensions (Unit : μm) Maxmum ratings (Tc = 250C) Characteristic Optical Output Power LD Reverse Voltage Operation Case Tem
Datasheet



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