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UNIKC |
Dual N-Channel Enhancement Mode MOSFET S = VGS, ID = 100mA VDS = 0V, VGS = ±16V 30 0.9 1.3 1.5 ±30 Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V , TJ = 125 °C 1 10 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 4V, ID = |
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UNIKC |
N-Channel Enhancement Mode MOSFET = VGS, ID = 250mA VDS = 0V, VGS = ±10V 20 V 0.4 0.63 1 ±30 mA Zero Gate Voltage Drain Current IDSS VDS = 16V, VGS = 0V VDS = 10V, VGS = 0V , TJ = 125 °C 1 mA 10 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 1. |
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UNIKC |
MOSFET |
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UNIKC |
P-Channel Enhancement Mode MOSFET Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = -250mA VDS = VGS, ID = -250mA VDS = 0V, VGS = ±20V -30 V -1.3 -1.8 -2.3 ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V , TJ = |
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UNIKC |
P-Channel Enhancement Mode MOSFET TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = -250mA VDS = VGS, ID = -250mA VDS = 0V, VGS = ±8V -20 V -0.3 -0.65 -1 ±100 nA Zero Gate Voltage Drain Current IDSS VDS |
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UNIKC |
P-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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