| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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UBIQ |
N-Ch 30V Fast Switching MOSFET z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS RDSON ID 30V 8.5mΩ 55A Applications z High Frequency Point-of-Load S |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V Applications RDSON 4mΩ ID 96A z High Frequency Point-of-Load Synchr |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings N-Ch 30V Fast Switching MOSFETs Product Summery BVDSS 30V RDSON 7mΩ I |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDSON 4mΩ ID 120A Applications z High Frequency Point-of-Load Synch |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Product Summery BVDSS 30V RDSON 12mΩ ID 37A Applications z High Freq |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDSON 12mΩ ID 9A Applications z High Frequency Point-of-Load Synchr |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Product Summery BVDSS 30V RDSON 55mΩ ID 4.2A Applications z High Frequency Point-of-Load Synchronous Buck Converter |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available BVDSS 30V RDSON 4mΩ ID 108A Applications z High Frequency Point-of-Load Synchronous Buck Conve |
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UBIQ |
MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDSON 12mΩ ID 53A Applications z High Frequency Point-of-Load Synch |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDSON 8.5mΩ ID 55A Applications z High Frequency Point-of-Load Sync |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDSON 12mΩ ID 43A Applications z High Frequency Point-of-Load Synch |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDSON 18mΩ ID 30A Applications z High Frequency Point-of-Load Synch |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDSON 18mΩ ID 24A Applications z SPS, Charger, Adaptor power switch |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Product Summery BVDSS 30V RDSON 18mΩ ID 28A Applications z High Freq |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDSON 4mΩ ID 108A Applications z High Frequency Point-of-Load Synch |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDSON 4mΩ ID 93A Applications z High Frequency Point-of-Load Synchr |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available N-Ch 30V Fast Switching MOSFETs Product Summery BVDSS 30V RDSON 18mΩ ID 28A Applications z Hi |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Product Summery BVDSS 30V RDSON 18mΩ ID 28A Applications z High Freq |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDSON 18mΩ ID 37A Applications z SPS,Charger,Adaptor power switchin |
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UBIQ |
N-Ch 30V Fast Switching MOSFETs z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Product Summery BVDSS 30V RDSON 18mΩ ID 30A Applications z High Freq |
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Desde 2024. D4U Semiconductor.
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