| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Tyco Electronics |
Monolithic HMIC Integrated Dual Bias Network n n n n n MA4BN1840-2 Chip Layout Broad Bandwidth Specified for 18 to 40 GHz Useable from 15 GHz to 50 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic, Glass Encapsulated Construction Description The MA4BN1840-2 devi |
|
|
|
|
Tyco Electronics |
(MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes • • • • • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Package Outlines 1, 2 MA4E2037 0.13 5 ± .0 10 (5.3 ± .4 ) 0.21 0 ± .0 40 (8.3 ± 1.6) Description M/A-COM's MA4E2037 single, |
|
|
|
|
Tyco Electronics |
Silicon Double Balanced HMIC Mixer n n n n n n + 28 dBm Typical Input IP3 62dB Typical L-R Isolation 8. 2dB Typical Conversion Loss + 13 to + 17 dBm LO Drive NO External Matching Required Low Cost Miniature Plastic MLP Package MLP 3mm Package Circuit Side View Description M/A-COM's |
|
|
|
|
Tyco Electronics |
Dual Anti- Parallel Pair PIN Diode MA44781 V2 • • • • • Surface Mount Packages Anti-Parallel Pair Construction SPC Process for Superior C-V Repeatability Designed for MRI applications Lead-Free (RoHs Compliant) equivalents available with 260°C reflow compatibility Absolute Maximum |
|
|
|
|
Tyco Electronics |
GaAs Flip-Chip PIN Diodes n n n n n n n Package Outline Top View Is Shown With Diode Junction Up Low Series Resistance, 4 Ω Ultra Low Capacitance, 25 fF High Switching Cutoff Frequency, 40 GHz 2 Nanosecond Switching Speed Can be Driven by Buffered TTL Silicon Nitride Passiv |
|
|
|
|
Tyco Electronics |
(MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1 MA4E1317 Description and Applications |
|
|
|
|
Tyco Electronics |
Silicon Medium Barrier Schottky Diodes • RF & Microwave Medium Barrier Silicon 8 V Schottky Diode • Available as Single Diode, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Package • Lead Free (RoHS Compliant) Equivalents Available With 260 Deg. C Ref |
|
|
|
|
Tyco Electronics |
Silicon Double Balanced HMICTM Mixer n n n n n n Low Cost SOT-25 Miniature Plastic Package 6.4 dB Typical Conversion Loss at 5000 MHz +3 to +7 dBm LO Drive Silicon Low Barrier Schottky Diodes Double Balanced Passive Mixer NO External Matching Required Outline SOT 25 Top View 3 2 1 De |
|
|
|
|
Tyco Electronics |
Low Tuning Voltage/Low Rs Silicon Hyperabrupt Varactor Diode • • • • • Low Series Resistance at Low Tuning Voltages High Capacitance Ratio at Low Tuning Voltages Surface Mount Plastic Packages : SC-79, SOD-323, SC-70 ( 3L ) SPC Process for Superior C vs V Repeatability Lead-Free (RoHs Compliant) equivalents av |
|
|
|
|
Tyco Electronics |
Low Voltage/Low Rs Silicon Hyperabrupt Varactor Diode • Low Series Resistance at Low Tuning Voltages • High Capacitance Ratio at Low Tuning Voltages • Surface Mount Plastic Packages : SC-79 , SOD323, SC-70 ( 3L ) (other packages & configurations available) • SPC Process for Superior C vs V Repeatability |
|
|
|
|
Tyco Electronics |
Ultra High Ratio Si Hyperabrupt Varactor Diode • • • • Ultra High Capacitance Ratio, C(0.1V)/C(4.7V) =18:1 C(0.1V)/C(2.7V) = 12:1 Surface Mount Plastic Packages : SC-79, SOD-323, SC-70, 3 Lead SPC Process for Superior C vs V and Q vs V Repeatability Lead-Free (RoHs Compliant) equivalents availabl |
|
|
|
|
Tyco Electronics |
10 TO 400 MHz CASCADABLE AMPLIFIER r (1 minute max.) Max. Peak Power (3 µsec max.) “S” Series Burn-in Temperature (Case) -62° to +125°C 125°C +10 Volts +13 dBm 50 mW 0.5 W 125°C Thermal Data: Vcc = 5 Vdc Thermal Resistance θjc Transistor Power Dissipation Pd Junction Temperature Ris |
|
|
|
|
Tyco Electronics |
1000 TO 4000 MHz CASCADABLE AMPLIFIER max.) “S” Series Burn-in Temperature (Case) -65° to +125°C 85°C +16 Volts +13 dBm 100 mW 0.25 W 85°C Thermal Data: Vcc = 15 Vdc Thermal Resistance θjc Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc 131°C/W 0.497 W 65°C O |
|
|
|
|
Tyco Electronics |
1000 TO 4000 MHz CASCADABLE AMPLIFIER in Temperature (Case) -65° to +125°C 125°C +6 Volts +13 dBm 100 mW 0.25 W 125°C Thermal Data: Vcc = 15 Vdc Thermal Resistance θjc Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc 132°C/W 0.171 W 23°C Outline Drawings Packa |
|
|
|
|
Tyco Electronics |
(MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes • • • • • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Package Outlines 1, 2 MA4E2037 0.13 5 ± .0 10 (5.3 ± .4 ) 0.21 0 ± .0 40 (8.3 ± 1.6) Description M/A-COM's MA4E2037 single, |
|
|
|
|
Tyco Electronics |
AlGaAs SP5T Reflective PIN Diode Switch n n n MA4AGSW5 Layout n n n n Ultra Broad Bandwidth: 50 MHz to 50 GHz 1.7 dB Insertion Loss, 30 dB Isolation at 50 GHz Low Current comsumption. -10 mA for low loss state +10 mA for Isolation state M/A-COM’s unique patent pending AlGaAs hetero-junc |
|
|
|
|
Tyco Electronics |
AlGaAs SPST Reflective PIN Diode Switch Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz Dual shunt diode configuration 0.35 dB Insertion Loss, 46 dB Isolation at 50 GHz Low Current consumption: -5 V for Low Loss State +10 mA for Isolation State n M/A-COM’s u |
|
|
|
|
Tyco Electronics |
(MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1 MA4E1317 Description and Applications |
|
|
|
|
Tyco Electronics |
Schottky Zero Bias Detector Diode |
|
|
|
|
Tyco Electronics |
SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes • Extremely Low Parasitic Capitance and Inductance • Extremely Small 0201 (600x300um) Footprint • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection • Reliable, Multilayer Metal |
|
Desde 2024. D4U Semiconductor.
|