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Tuofeng Semiconductor |
P-Channel MOSFET ● VDS = -12V,ID = -5.5A RDS(ON) < 38mΩ @ VGS=-2.5V RDS(ON) < 26mΩ @ VGS=-4.5V D G S Schematic diagram ● Advanced trench MOSFET process technology ● Ultra low on-resistance with low gate charge Application ●PWM applications ●Load switch ●Battery cha |
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Desde 2024. D4U Semiconductor.
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