TriQuint Semiconductor TGA Hoja de datos

No.	parte #	Fabricante	Descripción
1	TGA1135B	TriQuint Semiconductor	18-27.5 GHz 1W Power Amplifier • 0.25 um pHEMT Technology • 14 dB Nominal Gain at 23GHz • 30 dBm Nominal P1dB • 38dBm OTOI typical • Typical 15dB Input/Output RL • Bias 6 - 7V @ 540 mA • On-chip power detector diode Chip Dimensions 2.641 mm x 1.480 mm Primary Applications • Point
2	TGA2813-CP	TriQuint Semiconductor	GaN Power Amplifier  Frequency Range: 3.1 – 3.6 GHz  Pout: 50 dBm (at PIN = 27 dBm)  Power Gain: 23 dB (at PIN = 27 dBm)  PAE: 51 % CW  Bias: VD = 30 V pulsed (PW = 15 ms, DC = 30 %), IDQ = 300 mA, VG = -3 V Typical  Package Dimensions: 15.2 x 15.2 x 3.5 mm  Pack
3	TGA2237	TriQuint Semiconductor	10W GaN Power Amplifier  Frequency Range: 0.03 – 2.5GHz  PSAT: 40dBm at PIN = 27dBm  P1dB: >32dBm  PAE: >52%  Large Signal Gain: 13dB  Small Signal Gain: 19dB  IM3 @ 120mA POUT< 33dBm/tone: -30dBc  IM5 @ 120mA POUT< 33dBm/tone: -30dBc  Bias: VD = 30V, IDQ = 360mA,
4	TGA2237-SM	TriQuint Semiconductor	10W GaN Power Amplifier  Frequency Range: 0.03 – 2.5GHz  PSAT: >40dBm at PIN = 27dBm  P1dB: >33dBm  PAE: >50%  Large Signal Gain: >13dB  Small Signal Gain: >19dB  Input Return Loss: >10dB  Output Return Loss: >12dB  Bias: VD = 32V, IDQ = 360mA, VG = -2.6V Typical 
5	TGA2239	TriQuint Semiconductor	35W GaN Power Amplifier  Frequency Range: 13 – 15.5 GHz  PSAT: >45.5 dBm @ PIN = 21 dBm  PAE: >32% @ PIN = 21 dBm  Large Signal Gain: >24.5 dB  Small Signal Gain: 29.5 dB  Bias: VD = 22 V, IDQ = 900 mA, VG = -2.7 V Typical  Process Technology GaN-TQGaN15  Chip Dimen
6	TGA1082B	TriQuint Semiconductor	27- 32 GHz 1.5 Watt Power Amplifier • • • • • • TGA1082B Prototype Part #, Production Part # TBD 0.25 um pHEMT Technology 22 dB Nominal Gain at 30GHz 1W Nominal Pout @ P1dB 1.5W Psat at 30GHz Bias 6 - 7V @ 960 mA Chip Dimensions 4.13mm x 3.3mm Primary Applications • • The TriQuint T
7	TGA2511	TriQuint Semiconductor	X-Band Low Noise Amplifier • • • • • • TGA2511 Typical Frequency Range: 6 - 14 GHz 1.3 dB Nominal Noise Figure 20 dB Nominal Gain Bias: 5 V, 160 mA Gate Bias 5 V, 80 mA Self Bias 0.15 um 3MI pHEMT Technology Chip Dimensions 2.05 x 1.20 x 0.10 mm (0.081 x 0.047 x 0.004 in) Pr
8	TGA4532-SM	TriQuint Semiconductor	K-Band Power Amplifier • • • • • • • • Frequency Range: 17.7 – 19.7 GHz Power: 32.5 dBm Psat, 31 dBm P1dB Gain: 23 dB TOI: 41 dBm at 20 dBm/tone NF: 7 dB Integrated Power Detector Bias: Vd = 6 V, Idq = 900 mA, Vg = -0.68 V Typical Package Dimensions: 4.0 x 4.0 x 0.85 mm F
9	TGA2583-SM	TriQuint Semiconductor	10W GaN Power Amplifier • Frequency Range: 2.7 - 3.7 GHz • PSAT: 40.5 dBm • PAE: > 50 % • Small Signal Gain: 33 dB • Return Loss: > 12 dB • Bias: VD = 25 - 32 V (CW or Pulsed), IDQ = 175 mA, VG = −2.3 V Typical • Pulsed VD: PW = 100 us, DC = 10 % • Package Dimensions: 5.0 x
10	TGA2597	TriQuint Semiconductor	GaN Driver Amplifier • Frequency Range: 2-6 GHz • Output Power: > 31.5 dBm (PIN = 18 dBm) • PAE: > 31 % (PIN = 18 dBm) • Large Signal Gain: > 13.5 dB (PIN = 18 dBm) • Small Signal Gain: > 24 dB • VD = 25 V, IDQ = 40 mA, VG = -2.5 V typ. • Chip Dimensions: 2.140 mm x 1.50
11	TGA2621-SM	TriQuint Semiconductor	GaAs Power Amplifier  Frequency Range: 16 – 18.5 GHz  PSAT: >30 dBm at Pin = 10 dBm  PAE: >23 % at Pin = 10 dBm  Small Signal Gain: >24.5 dB  Input Return Loss: > 10 dB  Bias: VD = 6 V, IDQ = 500 mA, VG = -0.6 V Typical  Package Dimensions: 5.0 x 5.0 x 1.45 mm Fu
12	TGA8622-SCC	TriQuint Semiconductor	2 - 20 GHz Gain Block Amplifier and Performance • • • • • • 2 to 20 GHz Frequency Range 7.5 dB Gain with Greater than 30dB Gain-Control Capability 20 dBm Output Power at 1 dB Gain Compression 7 dB Noise Figure Input and Output SWR 1.7:1 Midband 2.769 x 2.159 x 0.152 mm (0.109 x 0.0
13	TGA9070-SCC	TriQuint Semiconductor	23 - 29 GHz High Power Amplifier and Performance • • • • • • 0.25um pHEMT Technology 23 GHz - 29 GHz Frequency Range Nominal 1 Watt (28GHz) @ P1dB Nominal Gain of 23 dB Bias 7V @ 400 mA Chip Dimensions 4.1mm x 3.0mm Primary Applications • • LMDS Point-to-Point Radio Description Th
14	TGA2501	TriQuint Semiconductor	Power Amplifier and Performance 34.5 dBm Midband Pout 24 dB Nominal Gain 10 dB Typical Input Return Loss 5 dB Typical Output Return Loss Bias Conditions: 8V @ 1.2A 0.25 µm Ku pHEMT 2MI Chip dimensions: 4.3 x 2.9 x 0.1 mm (170 x 115 x 4 mils) X-Ku Point-to-Point ECCM
15	TGA2502	TriQuint Semiconductor	Power Amplifier • • • • • • Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm TGA2502 0.5 um pHEMT Technology >25 dB Nominal Gain >36 dBm Nominal Psat 44 dBm Nominal IP3 @ 14 GHz Bias 7V @ 1.3A Idq, 2.1A under RF drive Chip Dimensions 2.5mm x 2.7mm x 0.1 mm Fixtured Measu
16	TGA2505	TriQuint Semiconductor	Power Amplifier and Performance 34 dBm Midband Pout 25 dB Nominal Gain 7 dB Typical Input Return Loss 12 dB Typical Output Return Loss Built-in Directional Power Detector with Reference 0.25µm pHEMT Technology Bias Conditions: 7V, 640mA Chip dimensions: 2.03 x 1.39
17	TGA2512	TriQuint Semiconductor	X-Band Low Noise Amplifier • • • • • • TGA2512 Typical Frequency Range: 5 - 15 GHz 1.4 dB Nominal Noise Figure 27 dB Nominal Gain Bias: 5 V, 160 mA Gate Bias 5 V, 90 mA Self Bias 0.15 um 3MI pHEMT Technology Chip Dimensions 2.05 x 1.20 x 0.10 mm (0.081 x 0.047 x 0.004 in) Pr
18	TGA2513-EPU	TriQuint Semiconductor	Wideband LNA • • • • • • • • TGA2513-EPU Frequency Range: 2-23 GHz 17 dB Nominal Gain > 30 dB Adjustable Gain with Vg2 16 dBm Nominal P1dB < 2 dB Midband Noise Figure 0.15 um 3MI pHEMT Technology Nominal Bias: Vd = 5V, Id = 75 mA Chip Dimensions: 2.09 x 1.35 x 0
19	TGA4042-EPU	TriQuint Semiconductor	Q-Band Driver Amplifier • • • • • • • • TGA4042-EPU Typical Frequency Range: 41 - 45 GHz 18 dBm Nominal P1dB 14 dB Nominal Gain 17 dB Nominal Return Loss On-Chip Power Detector Bias 6 V, 168 mA 0.25 um 2MI pHEMT Technology Chip Dimensions 3.20 x 2.18 x 0.1 mm (0.126 x 0.08
20	TGA4506	TriQuint Semiconductor	K Band Low Noise Amplifier • • • • • • • TGA4506 Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology Chip Dimensions 1.2 x 0.8 x 0.1 mm (0.047 x 0.031 x 0.004) in Preliminary