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Transys |
SCHOTTKY DIODE Power dissipation PD: 200 mW (Tamb=25℃) Forward Current IF: Reverse Voltage 200 m A VR: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-363 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Pa |
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Transys |
SCHOTTKY DIODE Power dissipation PD: 200 mW (Tamb=25℃) Forward Current IF: Reverse Voltage 200 m A VR: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-363 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Pa |
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Transys |
SCHOTTKY DIODE Power dissipation PD: 200 mW (Tamb=25℃) Forward Current IF: Reverse Voltage 200 m A VR: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-363 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Pa |
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Transys |
SCHOTTKY DIODE Power dissipation PD: 200 mW (Tamb=25℃) Forward Current IF: Reverse Voltage 200 m A VR: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-363 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Pa |
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Transys |
SCHOTTKY DIODE Power dissipation PD: 200 mW (Tamb=25℃) Forward Current IF: Reverse Voltage 200 m A VR: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-363 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Pa |
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Desde 2024. D4U Semiconductor.
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