| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba |
Field Effect Transistor tion of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are with |
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Toshiba Semiconductor |
N-Channel MOSFET vy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/curre |
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Toshiba |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.85 mA) 3. Packaging and Internal Circuit TK040N65Z 1: Gate 2: Drain (h |
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Desde 2024. D4U Semiconductor.
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