No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba |
SYSTEM PREAMPLIFIER FOR SINGLE CASSETTE DECK · Dual channel · Built-in EQ amp, REC amp, monitor amp, MIC (mixing) amp · MIC amp is suitable for both inner mic and mixing mic · Built-in source selector switch; RADIO-IN/TAPE-IN/AUX-IN · 6-operation mode are available for INNER MIC set and MIXING |
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Toshiba |
3V AM/FM 1 CHIP TUNER · · · · · · · For NEW FCC. AM Detector coil, FM IFT, IF coupling condenser are not needed. For adopting ceramic discriminator, it is not necessary to adjust the FM quad detector circuit. Built-in FM MPX VCO circuit. Built-in varactor diode for AFC. B |
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Toshiba Semiconductor |
AM/FM Radio IC · · · · · For NEW FCC. AM detector coil, FM IFT, IF coupling condenser are not needed. For adopting ceramic discriminator, it is not necessary to adjust the FM quad detector circuit. Built-in varactor diode for AFC Low supply current: (VCC = 3 V, Ta |
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Toshiba Semiconductor |
PRESET EQUALIZER IC |
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Toshiba |
AM/FM RADIO-IC |
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Toshiba Semiconductor |
16 GBIT (2G x 8 BIT) CMOS NAND E2PROM • Organization x8 Memory cell array 4328 × 256K × 8 × 2 Register 4328 × 8 Page size 4328 bytes Block size (256K + 14.5K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block |
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Toshiba |
3V AM/FM 1 CHIP TUNER IC (FOR DIGITAL TUNING SYSTEM) |
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Toshiba Semiconductor |
3 V AM/FM 1 Chip Tuner tem Applications. · Built-in 1/16 Pre-scaler for FM Local OSC Buffer. Built-in AM Low cut circuit. Low supply current. (VCC = 3 V, Ta = 25°C) ICCq (FM) = 13 mA (Typ.) ICCq (AM) = 8.5 mA (Typ.) Weight SDIP24-P-300-1.78: 1.2 g (Typ.) SSOP24-P-300-0.65A |
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Toshiba Semiconductor |
AM / FM Radio-IC • • • FM IFT, AM IFT and FM detector coil are not needed. Pin compatible of TA8164P. Operating supply voltage range : VCC (opr) = 1.8~7V (Ta = 25°C) TA2003FG Weight DIP16−P−300−2.54A: 1.00g (typ.) SSOP16−P−225−1.00A: 0.14g (typ.) 1 2006-04-11 TA2 |
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Toshiba |
NAND memory Toggle DDR1.0 ........................................................................................................................................................ 9 1.4. Diagram Legend............................................................................ |
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Toshiba |
NAND memory Toggle DDR1.0 Organization Table 1 Product Organization Parameter Part number (TOPER: 0~70℃) Part number (TOPER: -40~85℃) Device capacity Page size Block size Plane size Plane per one LUN LUN per one target Target per one device Number of valid blocks per a devic |
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Toshiba |
AM/FM IF+FM ST DET |
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Toshiba |
Power Driver IC for CD Player · · · · · · 4 channel BTL linear drivers Fixed voltage gain: GV = 15.5dB (typ.) High output power Thermal shutdown circuit Input reference voltage short protection Operating voltage range: VCC (opr) = 4.5~10.0 V (Ta = 25°C) Weight: 1.2 g (typ.) Bloc |
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Toshiba |
1.5V AM/FM IF+MPX · Suitable for combination with digital tuning system which is included IF counter. · Built−in AM / FM IF count output for IF counter of digital tuning system. FM: 10.7MHz AM: 450kHz · Adjustable for stop pulse sensitivity (in FM mode) · For adopting |
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Toshiba Semiconductor |
RIPPLE FILTER · Built−in a power switch · Excellent ripple rejection ratio: RR = 43dB (typ.) · Ripple filter output voltage can be controlled by external resistor. · Output voltage is limited to VRF = 1.5V (typ.) · Built−in two constant current sources. · Excellen |
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Toshiba Semiconductor |
LOW CONSUMPTION CURRENT STEREO GEADPHONE POWER AMPLIFIER FOR PORTABLE CD (3V USE) · Low consumption current: ICCQ = 1.9 mA (C-CUP) (typ.) ICCQ = 2.6 mA (OCL) (typ.) · Two kinds of gain mode available: GV = 16dB or 8.5dB · Output power (VCC = 2.0 V, f = 1 kHz, THD = 10%, RL = 16 Ω) Po = 8 mW (typ.) · Low noise: Vno = −98dBV (t |
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Toshiba Semiconductor |
FILTER · Built−in CR for LPFs and output (differential) amplifiers for the left and right channel. · Built−in audio SW and possible to FM signal input dynamic range up. (VCC = 9V) · It is possible to apply an analog de−emphasis circuit. · 2Vrms output. (VCC |
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Toshiba Semiconductor |
DUAL PRE AMPLIFIER · Low noise: VNI = 0.7µVrms (typ.) (Rg = 620Ω, BW = 20~20kHz, NAB) · No input coupling capacitor · High voltage gain: GVO = 100dB (typ.) (VCC = 9V, f = 1kHz) Weight: 0.31g (typ.) · Built−in forward / reverse control switch. · Built−in selectin |
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Toshiba Semiconductor |
Bipolar Linear Integrated Circuit Silicon Monolithic · Built−in preamplifier Input coupling condenser−less Built−in input capacitor for reducing buzz noise Low noise: Vni = 1.2 µVrms (typ.) Built−in power amplifier OCL (output condenser−less) Voltage gain : GV = 31dB (typ.) Built−in motor governor Curr |
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Toshiba |
GROUND ISOLATOR IC · Dual channel differential amplifier · Built-in feedback Resistor · High common mode rejection ratio : CMRR = 60dB (typ.) (VCC = 8 V, f = 1 kHz, VCM = 1 Vrms) · Low noise : VNO = 1.7 µVrms (typ.) (VCC = 8 V, Rg = 620 Ω, Filter = 20 Hz~20 kHz) · Low |
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