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Toshiba |
Silicon N-Channel MOSFETs (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V) 3. Packaging and Internal Circuit SOT23 T2N7002BK 1: Gate 2: Source 3: Dr |
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Toshiba |
Silicon N-Channel MOS Type Field-Effect Transistor |
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Desde 2024. D4U Semiconductor.
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