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Toshiba Semiconductor |
BI−DIRECTIONAL TRIODE THYRISTOR Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 Note 1: VDRM = 0.5×Rated ITM ≤ 12A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0 1 2001-07-10 SM8(G,J)48,USM8(G |
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Toshiba Semiconductor |
BI−DIRECTIONAL TRIODE THYRISTOR Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 Note 1: VDRM = 0.5×Rated ITM ≤ 12A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0 1 2001-07-10 SM8(G,J)48,USM8(G |
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Toshiba Semiconductor |
BI−DIRECTIONAL TRIODE THYRISTOR Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 Note 1: VDRM = 0.5×Rated ITM ≤ 12A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0 1 2001-07-10 SM8(G,J)48,USM8(G |
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Toshiba Semiconductor |
BI−DIRECTIONAL TRIODE THYRISTOR Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 Note 1: VDRM = 0.5×Rated ITM ≤ 12A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0 1 2001-07-10 SM8(G,J)48,USM8(G |
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Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS 0 IT (RMS) ITSM I t (Note 1) di /dt PGM PG (AV) VGM IGM Tj Tstg 2 UNIT Repetitive Peak Off-State Voltage V R.M.S On-State Current Peak One Cycle Surge On-State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On-State Current Pea |
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Desde 2024. D4U Semiconductor.
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