| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
NPN Transistor (1) High collector voltage: VCEO = 160 V (min) (2) Complementary to TTA004B (3) Small collector output capacitance: Cob = 12 pF (typ.) (4) High transition frequency: fT = 100 MHz (typ.) 3. Packaging and Internal Circuit (Note) TTC004B 1. Emitter 2. |
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Desde 2024. D4U Semiconductor.
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