| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
2-IN-1 Low-Side Power Switch • Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2-π-MOS) on each chip. • Can directly drive a power load from a CMOS or TTL logic. Weight: 0.08 g (typ.) • Built-in protection circuits agai |
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Toshiba Semiconductor |
DC Brushless Motor-Driver • • • • • • • • • • High voltage power side and low voltage signal side terminal are separated. Bootstrap circuits give simple high-side supply. Bootstrap diodes are built in. PWM and 3-phase decode circuit are built in. Outputs Rotation pulse signal |
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Toshiba Semiconductor |
Silicon Monolithic Power MOS |
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Toshiba Semiconductor |
Silicon Monolithic Power MOS l A monolithic power IC with a new structure combining a control block and a vertical power MOSFET (π-MOS) on a single chip. Built-in Protection circuits against overvoltage, load short circuiting, and thermal shutdown. l Can directly drive a power |
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Toshiba Semiconductor |
2-IN-1 Low-Side Switch • Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2-π-MOS) on each chip. • Can directly drive a power load from a CMOS or TTL logic. Weight: 0.08 g (typ.) • Built-in protection circuits agai |
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Toshiba Semiconductor |
POWER MOSFET GATE DRIVER |
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Toshiba Semiconductor |
DC Brushless Motor-Driver • • • • • • • • • Bootstrap circuit gives simple high side supply. Bootstrap diode is built in. PWM and 3-phase decoder circuit are built in. 3-phase bridge output using IGBTs. Outputs Rotation pulse signals. FRDs are built in. Incorporating over cur |
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Toshiba Semiconductor |
DC Brushless Motor-Driver • • • • • • • • Bootstrap circuit gives simple high side power supply. Bootstrap diodes are built in. A dead time can be set as a minimum of 1.4 µs, and it is the best for a Sine-wave from drive. 3-phase bridge output using IGBTs. FRDs are built in. |
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Toshiba Semiconductor |
DC Brushless Motor-Driver • • • • • • • • Bootstrap circuit gives simple high side supply. Bootstrap diodes are built in. A dead time can be set as a minimum of 1.4 µs and it is the best for a Sine-wave from drive. 3-phase bridge output using IGBTs FRDs are built in Included |
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Toshiba Semiconductor |
DC Brushless Motor-Driver • • • • • • • • Bootstrap circuit gives simple high side power supply. Bootstrap diodes are built in. A dead time can be set as a minimum of 1.4 µs, and it is the best for a Sine-wave from drive. 3-phase bridge output using IGBTs. FRDs are built in. |
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Toshiba Semiconductor |
DC Brushless Motor-Driver • • • • • • • • • • High voltage power side and low voltage signal side terminal are separated. It is the best for current sensing in three shunt resistance. Bootstrap circuit gives simple high-side supply. Bootstrap diodes are built in. A dead time |
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Toshiba Semiconductor |
Power MOSFET Gate Driver z Power MOSFET gate driver for 3-phase DC motor z Built-in power MOSFET protection and diagnosis function: low-voltage protection z Built-in charge pump circuit z Package: SSOP-24 (300 mil) with embossed-tape packing Pin Assignment Marking Weight: |
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Toshiba Semiconductor |
Silicon Monolithic Power MOS • A monolithic power IC with a new structure combining a control block and a vertical power MOSFET (L2-π-MOSⅤ) on single chip. • Can directly drive a power load from a CMOS or TTL logic. • Built-in protection circuits against overvoltage (active clam |
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Toshiba Semiconductor |
High-side Power Switch l A monolithic power IC with a new structure combining a control block (Bi –CMOS) and a vertical power MOS FET (π –MOS) on a single chip. l One side of load can be grounded to a high−side switch. l Can directly drive a power load from a microprocess |
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Toshiba Semiconductor |
High-side Power Switch l A monolithic power IC with a new structure combining a control block (Bi−CMOS) and a vertical power MOS FET (π−MOS) on a single chip. l One side of load can be grounded to a high−side switch. l Can directly drive a power load from a microprocess |
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Toshiba Semiconductor |
HIGH SIDE POWER SWITCH |
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Toshiba Semiconductor |
Silicon Monolithic Power MOS l A monolithic power IC with a new structure combining a control block and a vertical power MOS FET (π-MOS) on a single chip. l Can directly drive a power load from a CMOS logic. l Built-in protection against overvoltage, load short circuiting, and t |
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Toshiba Semiconductor |
High-side Power Switch z A monolithic power IC with a new structure combining a control block (Bi-CMOS) and a vertical power MOS FET (π-MOS) on a single chip z One side of load can be grounded to a high-side switch z Can directly drive a power load from a microprocessor |
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Toshiba Semiconductor |
High-side Power Switch z A monolithic power IC with a new structure combining a control block (Bi-CMOS) and a vertical power MOS FET (π-MOS) on a single chip. Weight: 0.08 g (typ.) z One side of the load can be grounded to a high-side switch. z Can directly drive a pow |
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Toshiba Semiconductor |
2 channel High-Side N-ch Power MOSFET Gate Driver z The large-current charge pump allows for fast switching z Power MOSFET protective and diagnostic functions are built-in. Protective functions: Overvoltage (internal device protection), overcurrent protection, VDD voltage drop detection * Overvolt |
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Desde 2024. D4U Semiconductor.
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