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Toshiba Semiconductor |
TOSHIBA InGaAP LED P TLSU114P TLYU114P Unit 612 636 590 nm Typ.Emission Wevelength ∆λ 15 17 13 IF 20 20 20 mA Min 47.6 47.6 47.6 mcd Luminous Intensity IV Typ. 250 250 130 Forward Voltage VF Max 2.4 2.4 2.5 V Reverse Current IR Max VR 50 50 50 µA 4 4 4 V IF 20 20 20 m |
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Toshiba Semiconductor |
(TLS336S / TLS337S) LED LAMP 8.0mm(0.3inch)Character Height Numerical Display |
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Toshiba Semiconductor |
(TLS346S / TLS347S) LED DISPLAY |
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Toshiba Semiconductor |
(TLS36xS) LED DISPLAY |
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Toshiba Semiconductor |
Panel Circuit Indicator ge Temperature Tstg (°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even i |
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Toshiba Semiconductor |
LED Lamps 0 4 175 Operation Temperature Topr (°C) −40~100 Storage Temperature Tstg (°C) −40~100 Note 1: Forward current derating IF – Ta 100 Allowable forward current IF (mA) 80 60 40 20 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C)) Electrical |
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Toshiba Semiconductor |
LED DISPLAY |
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Toshiba Semiconductor |
LED DISPLAY |
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Toshiba Semiconductor |
TOSHIBA InGaA P LED 120 120 120 120 120 120 -40~100 -40~120 Operating Temperature Topr (°C) Storage Temperature Tstg (°C) Electrical and Optical Characteristics (Ta = 25°C) Product Name TLRE62T TLRME62T TLSE62T TLOE62T TLYE62T TLPYE62T TLGE62T TLFGE62T TLPGE62T Unit Ty |
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Toshiba Semiconductor |
TOSHIBA LED Lamp InGaAP Red Light Emission VR = 4V IF = 20mA IF = 20mA IF = 20mA IF = 20mA (Note) Test Condition Min — — 476 476 — — — Typ. 2.1 — 1400 — 623 15 613 Max 2.5 50 — 2300 — — — Unit V µA mcd nm nm nm Peak emission wavelength Spectral line half width Dominant Wavelength (Note): La |
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Toshiba Semiconductor |
TOSHIBA LED Lamp InGaAP Red Light Emission IF = 20mA IF = 20mA IF = 20mA IF = 20mA (Note) Test Condition Min — — 2720 4760 — — — Typ. 2.1 — 10000 — 623 15 613 Max 2.5 50 — 23000 — — — Unit V µA mcd nm nm nm Peak emission wavelength Spectral line half width Dominant wavelength (Note): Lamps |
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Toshiba Semiconductor |
TOSHIBA InGaAP LED 626 613 605 587 lP (636) (623) (612) (590) nm Dl 13 13 13 13 IF 20 20 20 20 mA Luminous Intensity IV Min 2720 4760 4760 4760 Typ. 9000 11000 15000 13000 IF 20 20 20 20 mA Forward Voltage VF Typ. 1.9 2.0 2.0 2.0 V Max 2.4 2.4 2.4 2.4 IF 20 20 20 20 m |
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Toshiba Semiconductor |
TOSHIBA LED Lamp InGaAP Red Light Emission Max VR 50 50 µA 4 4 V IF 20 20 mA Typ. 2.0 2.0 IF 20 20 mA Precaution · · · Please be careful of the followings Soldering temperature: 260°C max Soldering time: 3 s max (Soldering portion of lead: Up to 2 mm from the body of the device) If the |
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Toshiba Semiconductor |
TOSHIBA LED Lamp InGaAP Red Light Emission Max VR 50 50 µA 4 4 V IF 20 20 mA Typ. 2.0 2.0 IF 20 20 mA Precaution · · · Please be careful of the followings Soldering temperature: 260°C max Soldering time: 3 s max (Soldering portion of lead: Up to 2 mm from the body of the device) If the |
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Toshiba Semiconductor |
(TLS336S / TLS337S) LED LAMP 8.0mm(0.3inch)Character Height Numerical Display |
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Toshiba Semiconductor |
(TLS346S / TLS347S) LED DISPLAY |
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Toshiba Semiconductor |
(TLS358 / TLS359) LED DISPLAY |
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Toshiba Semiconductor |
(TLS358 / TLS359) LED DISPLAY |
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Toshiba Semiconductor |
(TLS358T / TLS359T) LED DISPLAY |
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Toshiba Semiconductor |
(TLS358T / TLS359T) LED DISPLAY |
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Desde 2024. D4U Semiconductor.
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