Toshiba Semiconductor TLP Hoja de datos

No.	parte #	Fabricante	Descripción
1	TLP785	Toshiba Semiconductor	Photocoupler TLP785F Unit: mm Note 1 : When a VDE approved type is needed, please designate the Option(D4). • Construction mechanical rating 7.62 mm Pitch Standard Type Creepage distance 7.0 mm (min) Clearance 7.0 mm (min) Insulation thickness 0.4 mm
2	TLP701	Toshiba Semiconductor	Photocoupler • Common mode transient immunity : ±10 kV/μs (min) • Isolation voltage : 5000 Vrms (min) • Construction mechanical rating 0.25± 1.27±0.2 0.4±0.1 1.25±0.25 9.7±0.3 TOSHIBA 11-5J1S Weight: 0.26 g (t yp .) Creepage Distance Clearance Insulati
3	TLP521-1	Toshiba Semiconductor	Photocoupler TLP521-2 1 41 TLP521-4 81 16 2 32 72 15 1 : Anode 3 63 14 2 : Cathode 3 : Emitter 4 54 13 4 : Collector 1, 3 : Anode 5 12 2, 4 : Cathode 5, 7 : Emitter 6 11 6, 8 : Collector 7 10 8 9 1, 3, 5, 7 : Anode 2, 4, 6, 8 : C
4	TLP781	Toshiba Semiconductor	Photocoupler andard Type TLPxxxF Type Creepage distance 6.5mm (min) 8.0mm (min) Clearance 6.5mm (min) 8.0mm (min) Insulation thickness 0.4mm (min) 0.4mm (min) TOSHIBA ― Weight: 0.25g (typ.) 1 4 Pin Configurations (top view) 2 3 1 : Anode 2 : Cathod
5	TLP250	Toshiba Semiconductor	Photocoupler VCC 8 VO 7 VO 6 GND 5 Pin Configuration (top view) 1 8 2 7 3 6 4 5 1 : N.C. 2 : Anode 3 : Cathode 4 : N.C. 5 : GND 6 : VO (Output) 7 : VO 8 : VCC © 2019 1 Toshiba Electronic Devices & Storage Corporation Start of commercial productio
6	TLP721F	Toshiba Semiconductor	Photocoupler
7	TLP541G	Toshiba Semiconductor	Photocoupler ge (RGK = 27kΩ) Detector On-state current On-state current derating (Ta ≥ 25°C) Peak one cycle surge current Peak reverse gate voltage Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolat
8	TLP721	Toshiba Semiconductor	Photocoupler
9	TLP3502	Toshiba Semiconductor	Photocoupler stic Forward current Forward current derating (Ta ≥ 53°C) LED Peak forward current (100µs pulse, 100pps) Reverse voltage Junction temperature Off-state output terminal voltage On-state RMS Current Detector Ta=40°C Ta=60°C Symbol IF ∆IF/°C IFP VR Tj V
10	TLP350	Toshiba Semiconductor	Photocouplers apacitor must be connected between pin 8 and 5. (See Note 6) ICC 8 VCC 1 2 3 4 8 7 6 5 1 2003-10-27 www.DataSheet4U.com TLP350 Maximum Ratings (Ta = 25°C) Characteristics Forward current Forward current derating (Ta ≥ 85°C) LED Peak transient
11	TLP3052FS	Toshiba Semiconductor	Photocoupler (Min) 0.5 mm (Min) Pin Configuration (top view) 1 6 2 3 4 1: Anode 2: Csthode 3: N.C. 4:Terminal 1 6:Terminal 2 © 2019 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1987-06 2019-06-17 Absolute Maximum R
12	TLP160J	Toshiba Semiconductor	Photocoupler e use standard product type name, i.e. TLP160J(IFT7): TLP160J © 2019 1 Toshiba Electronic Devices & Storage Corporation Pin Configurations (top view) 1 6 3 4 1. Anode 3. Cathode 4. Triac Terminal 6. Triac Terminal Start of commercial produc
13	TLP281-4	Toshiba Semiconductor	Photocoupler ,3,5,7 :ANODE 2,4,6,8 :CATHODE 9,11,13,15 :EMITTER 10,12,14,16 :COLLECTOR © 2019 1 Toshiba Electronic Devices & Storage Corporation TOSHIBA 11-10F1 Weight: 0.19 g (typ.) Start of commercial production 1996-03 2019-06-17 Current Transfer Ratio
14	TLP525G	Toshiba Semiconductor	Photocoupler tings (Ta = 25°C) TLP525G,TLP525G−2,TLP525G−4 Characteristics Symbol Forward current Forward current derating Pulse forward current LE D Reverse voltage Input power dissipation Input power dissipation derating Junction temperature Off−sta
15	TLP543	Toshiba Semiconductor	gaas ired & photo-thyristor
16	TLP800A	Toshiba Semiconductor	Photo-interrupter
17	TLP592G	Toshiba Semiconductor	Photocoupler Photorelay Unit Forward current IF 50 mA Forward current derating (Ta ≥ 25°C) ∆IF/°C -0.5 mA/°C Peak forward current(100 μs pulse, 100 pps) IFP 1 A LED Reverse voltage VR 5 V Diode power dissipation PD 50 mW Diode power dissipation derating
18	TLP848	Toshiba Semiconductor	Photointerrupter Collector power dissipation derating (Ta>25℃) IF ΔIF/°C VR VCEO VECO PC ΔPC/°C 30 −0.33 5 15 5 75 −1 mA mA/°C V V V mW mW/°C Detector Collector current Operating temperature range Storage temperature range Soldering temperature IC 50 mA Top
19	TLP781F	Toshiba Semiconductor	Photocoupler andard Type TLPxxxF Type Creepage distance 6.5mm (min) 8.0mm (min) Clearance 6.5mm (min) 8.0mm (min) Insulation thickness 0.4mm (min) 0.4mm (min) TOSHIBA ― Weight: 0.25g (typ.) 1 4 Pin Configurations (top view) 2 3 1 : Anode 2 : Cathod
20	TLP3052F	Toshiba Semiconductor	Photocoupler (Min) 0.5 mm (Min) Pin Configuration (top view) 1 6 2 3 4 1: Anode 2: Csthode 3: N.C. 4:Terminal 1 6:Terminal 2 © 2019 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1987-06 2019-06-17 Absolute Maximum R