logo

Toshiba Semiconductor TCR DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
TCR5AM34

Toshiba Semiconductor
500mA CMOS Ultra Low Drop-Out Regulator
include over-current protection, over-temperature protection, Under-voltage-lockout and Auto-discharge function. The TCR5AM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm). As small ceramic input and outp
Datasheet
2
TCR5AM065

Toshiba Semiconductor
500mA CMOS Ultra Low Drop-Out Regulator
include over-current protection, over-temperature protection, Under-voltage-lockout and Auto-discharge function. The TCR5AM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm). As small ceramic input and outp
Datasheet
3
TCR5AM095

Toshiba Semiconductor
500mA CMOS Ultra Low Drop-Out Regulator
include over-current protection, over-temperature protection, Under-voltage-lockout and Auto-discharge function. The TCR5AM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm). As small ceramic input and outp
Datasheet
4
TCR5AM09

Toshiba Semiconductor
500mA CMOS Ultra Low Drop-Out Regulator
include over-current protection, over-temperature protection, Under-voltage-lockout and Auto-discharge function. The TCR5AM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm). As small ceramic input and outp
Datasheet
5
TCR5AM27

Toshiba Semiconductor
500mA CMOS Ultra Low Drop-Out Regulator
include over-current protection, over-temperature protection, Under-voltage-lockout and Auto-discharge function. The TCR5AM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm). As small ceramic input and outp
Datasheet
6
TCR5AM30

Toshiba Semiconductor
500mA CMOS Ultra Low Drop-Out Regulator
include over-current protection, over-temperature protection, Under-voltage-lockout and Auto-discharge function. The TCR5AM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm). As small ceramic input and outp
Datasheet
7
TCR5SB31

Toshiba Semiconductor
200mA CMOS Low-Dropout Regulator

• Low quiescent current ( IB = 40 μA (typ.) at IOUT = 0 mA )
• Low stand-by current ( IB(OFF) = 0.1 μA (typ.) @ Stand-by mode )
• Low-dropout voltage ( VIN - VOUT = 85 mV (typ.) at TCR5SB30, IOUT = 50 mA )
• High current output ( IOUT = 200 mA (max)
Datasheet
8
TCR5AM06

Toshiba Semiconductor
500mA CMOS Ultra Low Drop-Out Regulator
include over-current protection, over-temperature protection, Under-voltage-lockout and Auto-discharge function. The TCR5AM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm). As small ceramic input and outp
Datasheet
9
TCR5AM28

Toshiba Semiconductor
500mA CMOS Ultra Low Drop-Out Regulator
include over-current protection, over-temperature protection, Under-voltage-lockout and Auto-discharge function. The TCR5AM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm). As small ceramic input and outp
Datasheet
10
TCR5AM35

Toshiba Semiconductor
500mA CMOS Ultra Low Drop-Out Regulator
include over-current protection, over-temperature protection, Under-voltage-lockout and Auto-discharge function. The TCR5AM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm). As small ceramic input and outp
Datasheet
11
TCR5AM36

Toshiba Semiconductor
500mA CMOS Ultra Low Drop-Out Regulator
include over-current protection, over-temperature protection, Under-voltage-lockout and Auto-discharge function. The TCR5AM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm). As small ceramic input and outp
Datasheet
12
TCR5SBxx

Toshiba Semiconductor
200mA CMOS Low-Dropout Regulator












• Low quiescent current ( IB = 40 μA (typ.) at IOUT = 0 mA ) Low stand-by current ( IB(OFF) = 0.1 μA (typ.) @ Stand-by mode ) Low-dropout voltage ( VIN - VOUT = 85 mV (typ.) at TCR5SB30, IOUT = 50 mA ) High current output ( IOUT
Datasheet
13
TCR5SB18

Toshiba Semiconductor
200mA CMOS Low-Dropout Regulator

• Low quiescent current ( IB = 40 μA (typ.) at IOUT = 0 mA )
• Low stand-by current ( IB(OFF) = 0.1 μA (typ.) @ Stand-by mode )
• Low-dropout voltage ( VIN - VOUT = 85 mV (typ.) at TCR5SB30, IOUT = 50 mA )
• High current output ( IOUT = 200 mA (max)
Datasheet
14
TCR5SB20

Toshiba Semiconductor
200mA CMOS Low-Dropout Regulator

• Low quiescent current ( IB = 40 μA (typ.) at IOUT = 0 mA )
• Low stand-by current ( IB(OFF) = 0.1 μA (typ.) @ Stand-by mode )
• Low-dropout voltage ( VIN - VOUT = 85 mV (typ.) at TCR5SB30, IOUT = 50 mA )
• High current output ( IOUT = 200 mA (max)
Datasheet
15
TCR5SB23

Toshiba Semiconductor
200mA CMOS Low-Dropout Regulator

• Low quiescent current ( IB = 40 μA (typ.) at IOUT = 0 mA )
• Low stand-by current ( IB(OFF) = 0.1 μA (typ.) @ Stand-by mode )
• Low-dropout voltage ( VIN - VOUT = 85 mV (typ.) at TCR5SB30, IOUT = 50 mA )
• High current output ( IOUT = 200 mA (max)
Datasheet
16
TCR5SB24

Toshiba Semiconductor
200mA CMOS Low-Dropout Regulator

• Low quiescent current ( IB = 40 μA (typ.) at IOUT = 0 mA )
• Low stand-by current ( IB(OFF) = 0.1 μA (typ.) @ Stand-by mode )
• Low-dropout voltage ( VIN - VOUT = 85 mV (typ.) at TCR5SB30, IOUT = 50 mA )
• High current output ( IOUT = 200 mA (max)
Datasheet
17
TCR5SB27

Toshiba Semiconductor
200mA CMOS Low-Dropout Regulator

• Low quiescent current ( IB = 40 μA (typ.) at IOUT = 0 mA )
• Low stand-by current ( IB(OFF) = 0.1 μA (typ.) @ Stand-by mode )
• Low-dropout voltage ( VIN - VOUT = 85 mV (typ.) at TCR5SB30, IOUT = 50 mA )
• High current output ( IOUT = 200 mA (max)
Datasheet
18
TCR5SB29

Toshiba Semiconductor
200mA CMOS Low-Dropout Regulator

• Low quiescent current ( IB = 40 μA (typ.) at IOUT = 0 mA )
• Low stand-by current ( IB(OFF) = 0.1 μA (typ.) @ Stand-by mode )
• Low-dropout voltage ( VIN - VOUT = 85 mV (typ.) at TCR5SB30, IOUT = 50 mA )
• High current output ( IOUT = 200 mA (max)
Datasheet
19
TCR5SB30

Toshiba Semiconductor
200mA CMOS Low-Dropout Regulator

• Low quiescent current ( IB = 40 μA (typ.) at IOUT = 0 mA )
• Low stand-by current ( IB(OFF) = 0.1 μA (typ.) @ Stand-by mode )
• Low-dropout voltage ( VIN - VOUT = 85 mV (typ.) at TCR5SB30, IOUT = 50 mA )
• High current output ( IOUT = 200 mA (max)
Datasheet
20
TCR5SB32

Toshiba Semiconductor
200mA CMOS Low-Dropout Regulator

• Low quiescent current ( IB = 40 μA (typ.) at IOUT = 0 mA )
• Low stand-by current ( IB(OFF) = 0.1 μA (typ.) @ Stand-by mode )
• Low-dropout voltage ( VIN - VOUT = 85 mV (typ.) at TCR5SB30, IOUT = 50 mA )
• High current output ( IOUT = 200 mA (max)
Datasheet



logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad