| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
CCD Image Sensor · · · · · · · · · Number of image sensing elements: 5400 elements × 3 line Image sensing element size: 5.25 µm by 5.25 µm on 5.25 µm centers Photo sensing region: High sensitive and low dark current PN photodiode Distance between photodiode array: 42 |
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Toshiba Semiconductor |
CCD IMAGE SENSOR CCD |
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Toshiba Semiconductor |
CCD LINEAR IMAGE SENSOR CCD l Number of Image Sensing Elements : 128 elements l Image Sensing Element Size : 32µm×32µm on 32µm centers l Photo Sensing Region l Clock l Internal Circuit l Package : High sensitive pn photodiode : 3 Input pulses 5V : Sample & Hold circuit, Clamp c |
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Toshiba Semiconductor |
CCD LINEAR IMAGE SENSOR l Number of Image Sensing Elements : 480 elements (160×3 color sequential) l Image Sensing Element Size : 11µm×33µm on 33µm centers l Photo Sensing Region l Clock l Internal Circuit l Package l Color Filter : High sensitive pn photodiode : 3 Input p |
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Toshiba Semiconductor |
CCD Linear Image Sensor · · · · · · · · · Number of image sensing elements: 5340 elements × 3 line Image sensing element size: 7 µm by 7 µm on 7 µm centers Photo sensing region: High sensitive and low dark current PN photodiode Distance between photodiode array: 28 µm, 4 li |
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Toshiba Semiconductor |
Image Sensor CCD · · · · · · · · · Number of image sensing elements: 10680 elements × 6 line Image sensing element size: 2.8 µm by 4 mm on 4 µm centers Photo sensing region: High sensitive and low dark current PN photodiode Distance between photodiode array: 64 µm (1 |
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Desde 2024. D4U Semiconductor.
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