Toshiba Semiconductor SF1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	SF10J41A	Toshiba Semiconductor	SILICON PLANAR TYPE THYRISTOR Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 JEDEC JEITA TOSHIBA Weight: 2g TO−220AB SC−46 13−10G1B 1 2001-07-10 www.DataSheet4U.com SF10G41A,SF
2	SF1500GX22	Toshiba Semiconductor	HIGH POWER CONTROL APPLICATIONS
3	SF10G41A	Toshiba Semiconductor	SILICON PLANAR TYPE THYRISTOR Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 JEDEC JEITA TOSHIBA Weight: 2g TO−220AB SC−46 13−10G1B 1 2001-07-10 www.DataSheet4U.com SF10G41A,SF
4	SF10J48	Toshiba Semiconductor	SILICON PLANAR TYPE THYRISTOR Average On−State Current R.M.S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate V
5	SF10G48	Toshiba Semiconductor	SILICON PLANAR TYPE THYRISTOR Average On−State Current R.M.S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate V
6	SF10JZ47	Toshiba Semiconductor	SILICON DIFFUSED TYPE THYRISTOR
7	SF10GZ47	Toshiba Semiconductor	SILICON DIFFUSED TYPE THYRISTOR
8	USF10G48	Toshiba Semiconductor	Thyristor Average On−State Current R.M.S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate V
9	USF10J48	Toshiba Semiconductor	Thyristor Average On−State Current R.M.S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate V
10	TLSF1060	Toshiba Semiconductor	Panel Circuit Indicator 0 TLGF1060 TLFGF1060 TLPGF1060 www.DataSheet4U.com 30 15 75 −40~100 −40~100 Forward Current IF (mA) Please see Note 1 Reverse Voltage VR (V) Power Dissipation PD (mW) Operation Temperature Topr (°C) Storage Temperature Tstg (°C) Note 1: Forward cur