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Toshiba Semiconductor |
Power Transistor |
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Toshiba Semiconductor |
N-Channel IGBT ng your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide |
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Toshiba Semiconductor |
INSULATED GATE BIPOLAR TRANSISTOR |
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Toshiba Semiconductor |
Power MOSFET |
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Toshiba Semiconductor |
High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse Motor nfiguration 12 R1 R2 4 7 10 3 6 9 2 R1 R2 1 5 8 R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω 11 1 2002-11-20 MP6301 Thermal Characteristics Characteristics Thermal resistance of junction to ambient (6 devices operation, Ta = 25°C) Maximum lead temperature for |
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Toshiba Semiconductor |
Silicon N-Channel IGBT current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance tf toff VF trr Rth (j-c) IF = 10 A, VGE |
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Toshiba Semiconductor |
Silicon N-Channel IGBT cut-off current Collector-emitter voltage Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance |
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Toshiba Semiconductor |
Silicon N-Channel IGBT eveloping your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handlin |
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Toshiba Semiconductor |
Silicon N-Channel IGBT saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE(off) VCE(sat) Cies tr ton tf toff VF trr Rth(j-c) IF = 20A, VGE = 0 IF = |
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Desde 2024. D4U Semiconductor.
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