| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
SILICON N CHANNEL 1GBT |
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Toshiba Semiconductor |
High Power Switching Applications Motor Control Applications orward current 1 ms Collector power dissipation (Tc = 25°C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque 1 ms DC |
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Toshiba Semiconductor |
High Power Switching Applications Motor Control Applications aracteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forw |
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Toshiba Semiconductor |
IGBT Module Silicon N Channel IGBT time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Turn-on Switching loss Turn-off Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff |
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Desde 2024. D4U Semiconductor.
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