| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
2SK4013 under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperat |
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Toshiba Semiconductor |
Silicon N-Channel MOS Type FET MAX. 4.1 ± 0.2 5.7 2.3 2.3 2.3 ± 0.2 123 0.8 MAX. 1.1 MAX. 0.6 ± 0.15 0.6 ± 0.15 1. GATE 2. DRAIN （HEAT SINK） 3. SOURSE 2 1 3 JEDEC ⎯ JEITA ⎯ TOSHIBA 2-7J2B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the a |
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Toshiba Semiconductor |
2SK4012 continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. opera |
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Toshiba Semiconductor |
N-Channel MOSFET te 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 2.3 ± 0.2 5.7 3 JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7J2B Note: Using continuously under heavy loads (e.g. the application of high temperature/curren |
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Toshiba Semiconductor |
N-Channel MOSFET g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK40E10N1 1: Gat |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain |
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Toshiba Semiconductor |
MOSFET |
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Toshiba Semiconductor |
N-Channel MOSFET JEDEC ⎯ JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decreas |
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Toshiba Semiconductor |
N-Channel MOSFET e current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in te |
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Toshiba Semiconductor |
N-Channel MOSFET loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ |
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Toshiba Semiconductor |
N-Channel MOSFET ly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tempe |
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Toshiba Semiconductor |
N-Channel MOSFET te 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significan |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) High-speed switching (2) Low gate charge: QSW = 7.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 8.5 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Cir |
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Toshiba Semiconductor |
MOSFET tinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin |
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Toshiba Semiconductor |
2SK4021 ent Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range IAR EAR Tch Tstg 4.5 2.0 150 −55 to 150 A mJ °C °C JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7J2B Note: Using continuously under heavy loads (e.g. the application of high W |
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Toshiba Semiconductor |
N-Channel MOSFET te 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Weight: 0.36 g (typ.) www.DataSheet4U.com Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/volta |
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Toshiba Semiconductor |
N-Channel MOSFET alanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change |
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Toshiba Semiconductor |
MOSFET urrent Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ ⎯ 2-10V1A Weight: 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage a |
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Desde 2024. D4U Semiconductor.
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