Toshiba Semiconductor K20 Hoja de datos

No.	parte #	Fabricante	Descripción
1	K2038	Toshiba Semiconductor	2SK2038
2	K2039	Toshiba Semiconductor	2SK2039
3	2SK209	Toshiba Semiconductor	N-Channel MOSFET
4	2SK2009	Toshiba Semiconductor	N-Channel MOSFET f the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“De
5	K2057	Toshiba Semiconductor	2SK2057
6	2SK2034	Toshiba Semiconductor	N-Channel MOSFET
7	2SK2036	Toshiba Semiconductor	N-Channel MOSFET
8	TK20J60U	Toshiba Semiconductor	N-Channel MOSFET 0.6 －0.1 123 1. Gate 2. Drain (heatsink) 3. Source JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
9	K209	Toshiba Semiconductor	2SK209
10	SSM6K208FE	Toshiba Semiconductor	Silicon N-Channel MOSFET emperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individu
11	2SK2013	Toshiba Semiconductor	Silicon N Channel MOS Type Field Effect Transistor ling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Unit: mm JEDEC ― JEITA SC−67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) K2013 Part No. (or
12	2SK2035	Toshiba Semiconductor	N-Channel MOSFET
13	2SK2037	Toshiba Semiconductor	N-Channel MOSFET
14	2SK2038	Toshiba Semiconductor	N-Channel MOSFET
15	2SK208	Toshiba Semiconductor	Silicon N Channel Junction Type Field Effect Transistor tor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1B Weight: 0.012 g (typ.)
16	3SK207	Toshiba Semiconductor	Silicon N Channel Dual Gate MOS Type FET
17	K20J60U	Toshiba Semiconductor	TK20J60U 123 1. Gate 2. Drain(heat sink) 3. Source JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperatur
18	2SK2039	Toshiba Semiconductor	N-Channel MOSFET
19	2SK2033	Toshiba Semiconductor	Silicon N-Channel MOS Type FET e within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability t
20	SSM6K202FE	Toshiba Semiconductor	Silicon N-Channel MOSFET (1) 1.8-V drive (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 101 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 85 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit ES6 SSM6K202FE 1: Drain 2: Drain 3: Gate 4: Sourc